Schottky Barrier Diodes (SBD)
MA3X720 (MA720)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
(0.65)
• Forward current (Average) IF(AV) = 500 mA rectification is
possible
• Optimum for high frequency rectification because of its short
reverse recovery time trr
• Low forward voltage VF and good rectification efficiency
5˚
1.50+0.25
–0.05
■ Features
2.8+0.2
–0.3
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VR
40
V
Maximum peak reverse voltage
VRM
40
V
Forward current (Average)
IF(AV)
500
mA
Non-repetitive peak forward
surge current *
IFSM
2
A
Marking Symbol: M2W
Junction temperature
Tj
125
°C
Internal Connection
Storage temperature
Tstg
−55 to +125
°C
3
Reverse voltage
0 to 0.1
Parameter
1.1+0.3
–0.1
1.1+0.2
–0.1
10˚
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
EIAJ: SC-59
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 500 mA
0.55
V
Reverse current
IR
VR = 35 V
100
µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 0.1 IR, RL = 100 Ω
5
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00079CED
1
MA3X720
IF V F
IR V R
103
25°C
Ta = 100°C
−20°C
10
1
10−1
103
102
Forward voltage VF (V)
Reverse current IR (mA)
Forward current IF (mA)
0.8
Ta = 100°C
102
VF Ta
104
25°C
10
0.6
IF = 500 mA
0.4
100 mA
0.2
10 mA
10−2
0
0.1
0.2
0.3
0.4
0.5
1
0.6
0
Forward voltage VF (V)
10
30
40
50
0
−40
60
Reverse voltage VR (V)
IR T a
104
20
0
40
Ct VR
120
160
200
IF(surge) tW
103
80
VR = 15 V
80
Ambient temperature Ta (°C)
Ta = 25°C
103
102
10
1
−40
40
80
120
160
Ambient temperature Ta (°C)
2
60
40
20
0
0
200
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Reverse current IR (mA)
IF(surge)
0
10
20
30
40
50
Reverse voltage VR (V)
SKH00079CED
60
tW
Non-repetitive
102
10
1
10 −1
10 −1
1
Pulse width tW (ms)
10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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