MA3X720

Schottky Barrier Diodes (SBD)
MA3X720 (MA720)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
(0.65)
• Forward current (Average) IF(AV) = 500 mA rectification is
possible
• Optimum for high frequency rectification because of its short
reverse recovery time trr
• Low forward voltage VF and good rectification efficiency
5˚
1.50+0.25
–0.05
■ Features
2.8+0.2
–0.3
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VR
40
V
Maximum peak reverse voltage
VRM
40
V
Forward current (Average)
IF(AV)
500
mA
Non-repetitive peak forward
surge current *
IFSM
2
A
Marking Symbol: M2W
Junction temperature
Tj
125
°C
Internal Connection
Storage temperature
Tstg
−55 to +125
°C
3
Reverse voltage
0 to 0.1
Parameter
1.1+0.3
–0.1
1.1+0.2
–0.1
10˚
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
EIAJ: SC-59
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 500 mA
0.55
V
Reverse current
IR
VR = 35 V
100
µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 0.1 IR, RL = 100 Ω
5
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00079CED
1
MA3X720
IF  V F
IR  V R
103
25°C
Ta = 100°C
−20°C
10
1
10−1
103
102
Forward voltage VF (V)
Reverse current IR (mA)
Forward current IF (mA)
0.8
Ta = 100°C
102
VF  Ta
104
25°C
10
0.6
IF = 500 mA
0.4
100 mA
0.2
10 mA
10−2
0
0.1
0.2
0.3
0.4
0.5
1
0.6
0
Forward voltage VF (V)
10
30
40
50
0
−40
60
Reverse voltage VR (V)
IR  T a
104
20
0
40
Ct  VR
120
160
200
IF(surge)  tW
103
80
VR = 15 V
80
Ambient temperature Ta (°C)
Ta = 25°C
103
102
10
1
−40
40
80
120
160
Ambient temperature Ta (°C)
2
60
40
20
0
0
200
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Reverse current IR (mA)
IF(surge)
0
10
20
30
40
50
Reverse voltage VR (V)
SKH00079CED
60
tW
Non-repetitive
102
10
1
10 −1
10 −1
1
Pulse width tW (ms)
10
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and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP