CENTRO NACIONAL DE MICROELECTRÓNICA
Instituto de Microelectrónica de Barcelona
INFRAESTRUCTURA CIENTÍFICO TECNICA SINGULAR
LARGE-SCALE SCIENTIFIC AND TECHNICAL FACILITY
LIDERAC–ListofEquipmentopenedinQualifiedSelf‐serviceMode
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Equipment Description
1
3
4
5
6
8
N7
N2
N6
N8
N4
K4
FIB Zeiss 1560 XB
E beam Raith 150, EBL for 4"
E beam SEM Zeiss Leo 1530
AFM Nanoacope IV& Dim 3100
NIL- Obducat 4"
Sputtering Biorad E-5000
9
10
C11
F23
Optical Confocal Microscope
SB6 Karl Suss substrate bonder
11
12
N9
C1
Optical Microscope in Nano Area
Ellipsometer
13
Q12 &
Q13
14
16
P6
C17
17
18
S4
F8
19
Area
contact
CMOS*
Compatib
Nanotecnologies
Nanotecnologies
Nanotecnologies
Nanotecnologies
Nanotecnologies
Metal –
Caracterization
Microsystems
Microsystems
Xavier Borrisé
Xavier Borrisé
Xavier Borrisé
Xavier Borrisé
Xavier Borrisé
Jose Calvo
M
X
X
X
M
M
Marta Duch
Marta Duch
X
M
Nanotecnologies
Thermal ProcCaracterization
Microsystems
Xavier Borrisé
Oihane Beldarrain
X
X
Marta Duch
X
Nuria Torres
Roser Mas
X
X
Critical Point Dryer
Delta 80 Karl Suss spinner for SU-8
Wet Etching
Dry EtchingCaracterization
Microsystems
Photolithography
Marta Duch
Javier Sánchez
X
X
F11
Karl Suss MA/MB 6 2-sides aligner
Photolithography
Javier Sánchez
M
20
F12
Hot Plates + fume hood
Photolithography
Javier Sánchez
X
21
Q15
Photolithography
Javier Sánchez
M
22
C18
X
P10
Thermal ProcCaracterization
Dry Etching
Oihane Beldarrain
23
Roser Mas
M
24
H10
Thermal Proc.
Oihane Beldarrain
M
25
Q17
Nanotecnologies
Xavier Borrisé
X
26
F10
Photolithography
Javier Sánchez
X
27
28
N12
C15
Chemical Bench. Integrates PR
developing equipment Laurell WS-400A6NPP
Nanospec 6100 UV/Visible
interferometer
DRIE-ICP Alcatel AMS110-DE Dry etch
for Si and dielectrics
Plasmalab PL800- PECVD deposition of
SiO2, Si3N4 and a-Si
Wet station for spinning and
developping resists for EBL and NIL
Heidelberg DWL 99: 2-sides Laser
pattern generator. Mask writing and/or
direct prototyping
SEM Zeiss Auriga 40 (fora SB)
Filmetrics F20. Optical interforemeter for
thickness measurements
Nanotecnologies
Thermal ProcCaracterization
Xavier Borrisé
Oihane Beldarrain
M
X
29
S3
PLASMOS. Si-Glass wafer bonder
Microsystems
Marta Duch
M
30
F19
Delta 20 - Spinner for FR and AZ
Chemical wet bench: KOH, TMAH, Ni
electroless, lift off
TEPLA 300E plasma asher
Veeco 150 profilometer
Photolithography
Javier Sánchez
X
CENTRO NACIONAL DE MICROELECTRÓNICA
Instituto de Microelectrónica de Barcelona
INFRAESTRUCTURA CIENTÍFICO TECNICA SINGULAR
LARGE-SCALE SCIENTIFIC AND TECHNICAL FACILITY
(*) Note: The Clean Room has a CMOS technology acting as a reference, so that appropriate cleaning and contamination‐free conditions must be observed. The same applies to a set of other CMOS‐compatible or CMOS‐like existing technologies. Therefore potential risks of contamination of equipment, tools and environment must be avoided. Those risks are basically of two types: a) alkali metal ions (Na, K) and b) contaminant metals like some noble metals (Au, Pt, Pd, Ag) that are almost impossible to remove by conventional cleaning processes used in the Cleanroom. The most critical systems from this point of view are the oxidation‐diffusion furnaces. Related to contamination of the equipment 3 levels are identified: a) clean systems (C): only CMOS‐technology‐compatible samples can be processed. b) MNC Equipment (M): contaminated samples (for instance with noble metals contents) can be processed. c) Mixed systems (X): systems that can be considered as clean or as MNC, depending on the appropriate use of some accessories.
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