Práctica 3. LABORATORIO

Práctica 3. LABORATORIO
Electrónica de Potencia. 2004
Inversor de 50Hz controlado por ancho de pulso
con modulación senoidal SPWM
1.
Diagrama de Bloques
El inversor que va a montar tiene el siguiente diagrama de bloques:
ver apuntes de clase
2.
Oscilador
Para el oscilador usaremos uno de los operacionales que tiene el integrado
MC 1458N. El oscilador es un amplificador realimentado positivamente para
provocar la inestabilidad y, por lo tanto, la oscilación.
Figura 1: Circuito oscilador senoidal. Determinar R y C para que oscile a 50Hz
En la figura 1 se indica el montaje que debe realizar. La condición para que
oscile es que:
R2 ≥ 2R1
La frecuencia de la oscilación se determina con la realimentación positiva, y su
valor es:
1
fm =
2πRC
1
Calcule los valores nominales de R3 = R4 y de C1 = C2 para que la frecuencia
de oscilación esté lo más cercana posible a 50Hz. Mida los valores reales de los
componentes elegidos:
R=
C=
fm =
Monte el circuito; alimente el operacional con ±5V . Visualice la señal que
obtiene en la salida del operacional y dibújela en la Figura 2, indicando los
valores de pico y el periodo.
Figura 2: Señales del oscilador
3.
Inversor
Para obtener la señal seno2 usaremos el segundo operacional del integrado
MC 1458N en configuración de amplificador inversor con ganancia unitaria, tal
y como se indica en la Figura 3 Visualice la señal seno2 en el osciloscopio.
Dibújela en la misma Figura que seno1.
4.
Comparador
El comparador se implementa con dos de los cuatro operacionales que contiene el integrado LM348. Monte el circuito de la Figura 4. Programe el generador
de señales para que proporcione una onda triangular alterna de 1kHz y aproximadamente 0,8V de amplitud. Visualice en el canal uno del osciloscopio seno1
y en el canal dos la señal triangular del generador, tri. Compruebe que la amplitud de la triangular es ligeramente superior que la amplitud de la senoidal.
Si no es ası́, aumente la amplitud de la triangular hasta que sea ligeramente
2
Figura 3: Inversor para obtener seno2
Figura 4: Comparador
superior. Una vez verificado el nivel de la triangular, visualice en el osciloscopio
las señales S1 y S2. Dibújelas en la Figura 6
5.
Restador
El restador se implementa con uno de los operacionales que queda libre en
el integrado LM348. El esquema es el de la Figura 5. A la salida del restador
se obtiene la señal P W M = S2 − S1 . Visualice dicha señal en el osciloscópio y
dibújela en la Figura 6, debajo de S1 y S2. Conteste a las siguientes preguntas:
Frecuencia de S1 =
Frecuencia de S2 =
Frecuencia de P W M =
6.
Acoplamiento y etapa de potencia
Usando dos optoaclopadores implemente un amplificador en clase D tal y
como se muestra en la Figura 7. ¡NO CONECTE LAS TENSIONES DE ALI3
Figura 5: Restador: S2 − S1 = P W M
MENTACIÓN +15 NI -15 HASTA CONSULTAR CON EL PROFESOR! Verifique el orden de los pines de los optoacopladores. Estos dispositivos tienen la
posibilidad de utilizarse como transistores BJT utilizando el pin correspondiente a la base. Sin embargo, cuando se utilizan como optoacopladores, dicho pin
debe dejarse al aire (sin conectar), ya que la corritente de base la suministra el
fotodiodo interno.
4
Figura 6: Señales S1, S2 y PWM
Figura 7: Acoplamiento de la señal de control con aislamiento galvánico y amplificación.
5
MC1458
MC1558
HIGH PERFORMANCE
DUAL OPERATIONAL AMPLIFIERS
■ LOW POWER CONSUMPTION
■ LARGE INPUT VOLTAGE RANGE
■ NO LATCH-UP
■ HIGH GAIN
■ SHORT-CIRCUIT PROTECTION
N
DIP8
(Plastic Package)
■ NO FREQUENCY COMPENSATION
REQUIRED
DESCRIPTION
The MC1458 is high performance monolithic dual
operational amplifier intended for a wide range of
analog applications:
❑ Summing amplifier
D
SO8
(Plastic Micropackage)
❑ Voltage follower
❑ Integrator
❑ Active filter
❑ Function generator
PIN CONNECTIONS (top view)
The high gain and wide range of operating voltages provide superior performance in integrator,
summing amplifiers and general feedback applicatons.
ORDER CODE
Part
Number
Temperature
Range
MC1458
0°C, +70°C
MC1458I
-40°C, +105°C
MC1558
-55°C, +125°C
Example : MC1458N
Package
N
D
•
•
•
•
•
•
Output 1
1
Inverting input 1
2
-
3
+
Non-inverting input 1
- 4
V
CC
8
VCC+
7
Output 2
-
6
Inverting input 2
+
5
Non-inverting input 2
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
December 2001
1/6
MC1458-MC1558
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
MC1458
MC1558
Unit
Supply voltage
±22
V
Vi
Input Voltage
±15
V
Vid
Differential Input Voltage
±30
V
Output Short-circuit Duration
Ptot
Power Dissipation
Infinite
D Suffix
N Suffix
Toper
Operating Free-air Temperature Range
Tstg
Storage Temperature Range
2/6
MC1458I
300
500
0 to +70
-40 to +105
-65 to +150
mW
-55 to +125
°C
°C
MC1458-MC1558
ELECTRICAL CHARACTERISTICS
VCC = ±15V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vio
Input Offset Voltage (Rs ≤ 10kΩ)
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
1
5
6
mV
Iio
Input Offset Current
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
2
200
300
nA
Iib
Input Bias Current
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
30
500
800
nA
Avd
Large Signal Voltage Gain (Vo = ±10V, RL = 2kΩ)
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
50
25
200
V/mV
SVR
Supply Voltage Rejection Ratio (Rs ≤ 10kΩ)
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
77
77
90
dB
Icc
Supply Current, all Amp, no load
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
2.3
5
6
mA
Vicm
Input Common Mode Voltage Range
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
±12
±12
CMR
Common Mode Rejection Ratio (Rs ≤ 10kΩ)
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
70
70
90
Output Short-circuit Current
Tamb = 25°C
10
20
12
10
12
10
14
13
V
0.2
0.8
V/µs
Ios
Output Voltage Swing
Tamb = 25°C
±Vopp
SR
Tmin ≤ Tamb ≤ Tmax
RL ≤ 10kΩ
RL ≤ 2kΩ
RL ≤ 10kΩ
RL ≤ 2kΩ
Slew Rate (VI = ±10V, RL = 2kΩ, CL = 100pF, unity Gain)
dB
35
mA
tr
Rsie Time (VI = ±20mV, RL = 2kΩ, CL = 100pF, unity Gain)
0.3
µs
KOV
Overshoot (VI = 20mV, RL = 2kΩ, CL = 100pF, unity Gain)
5
%
2
MΩ
RI
Input Resistance
Zic
Common-mode Input Impedance
200
MΩ
CI
Input Capacitance
1.4
pF
RO
Output Resistance
75
Ω
Full Power Bandwidth (RL = 2kΩ, VO ≥ ±10V, AVD = 1, THD ≤ 5%
14
KHz
FPB
0.3
3/6
MC1458-MC1558
Symbol
B
Parameter
Unity Gain Bandwidth
(VI = 10 mV, RL = 2kΩ, CL = 100pF)
GBP
Gain Bandwith Product (VI = 10 mV, RL = 2kΩ, CL = 100pF
f =100kHz)
THD
Total Harmonic Distortion (f = 1kHz, Av = 20dB, RL = 2kΩ
CL = 100pF, Vo = 2Vpp)
Typ.
1
0.4
1
0.02
Max.
Unit
MHZ
MHz
%
45
nV
-----------Hz
Phase Margin
65
Degrees
Gain Margin
11
dB
120
dB
en
Equivalent Input Noise Voltage (f = 1kHz, Rs = 100Ω)
φm
Am
Vo1/Vo2 Channel Separation
4/6
Min.
www.fairchildsemi.com
LM348/LM248
Quad Operational Amplifier
Features
Description
•
•
•
•
•
•
•
•
•
•
TheLM348/LM248 is a true quad LM741. It consists of four
independent, high-gain, internally compensated, low power
operational amplifiers which have been designed to provide
functional characteristics identical to those of the familiar
LM741 operational amplifier. In addition the total supply
current for all four amplifiers is comparable to the supply
current of a single LM741 type OP Amp. Other features
include input offset currents and input bias current which are
much less than those of a standard LM741. Also, excellent
isolation between amplifiers has been achieved by
independently biasing each amplifier and using layout
techniques which minimize thermal coupling.
LM741 OP Amp operating characteristics
Low supply current drain
Class AB output stage no crossover distortion
Pin compatible with the LM324/LM248
Low input offset voltage : 1mV Typ.
Low input offset current : 4nA Typ.
Low input bias current : 30nA Typ.
Gain bandwidth (unity gain): 1.0MHz Typ.
High degree of isolation between amplifiers: 120dB
Overload protection for inputs and outputs
14-DIP
1
14-SOP
1
Internal Block Diagram
Rev. 1.0.1
©2001 Fairchild Semiconductor Corporation
LM348/LM248
Schematic Diagram
(One Section Only)
Absolute Maximum Ratings
Parameter
Supply Voltage
Differential Input Voltage
2
Symbol
Value
Unit
VCC
±18
V
VI(DIFF)
36
V
Input Voltage
VI
±18
V
Output Short Circuit Duration
-
Continuous
-
Operating Temperature
LM348
LM248
TOPR
0 ~ +70
-25 ~ +85
°C
Storage Temperature
TSTG
- 65~ +150
°C
LM348/LM248
Electrical Characteristics
(VCC =15V, VEE= -15V, TA=25 °C, unless otherwise specified)
Parameter
Symbol
Input Offset Voltage
VIO
Input Offset Current
IIO
Conditions
RS≤10KΩ
Note 1
Note 1
LM248
Min.
LM348
Typ. Max. Min.
Typ. Max.
-
1
6.0
-
1
6.0
-
-
7.5
-
-
7.5
-
4
50
-
4
50
-
-
125
-
-
100
-
30
200
-
30
200
-
-
500
-
-
400
Unit
mV
nA
nA
Input Bias Current
IBIAS
Input Resistance
RI
-
0.8
2.5
-
0.8
2.5
-
MΩ
Supply Current (all Amplifiers)
ICC
-
-
2.4
4.5
-
2.4
4.5
mA
Large Signal Voltage Gain
GV
25
160
-
25
160
-
15
-
-
15
-
-
Channel Separation
CS
-
120
-
-
120
-
dB
Common Mode Input
Voltage Range
VI(R)
Note 1
±12
-
-
±12
-
-
V
Small Signal Bandwidth
BW
GV = 1
-
1.0
-
-
1.0
-
MHz
MPH
GV = 1
-
60
-
-
60
-
Degree
Slew Rate (Note2)
SR
GV = 1
-
0.5
-
-
0.5
-
V/µs
Output Short Circuit Current
ISC
mA
Phase Margin (Note2)
Note 1
RL≥2KΩ
Note 1
f = 1KHz to 20KHz
-
-
25
-
-
25
-
±12
±13
-
±12
±13
-
RL≥2KΩ
±10
±12
-
±10
±12
-
RL≥10KΩ
Note 1
V/mV
Output Voltage Swing
VO(P-P)
Common Mode Rejection
Ratio
CMRR
RS≥10KΩ Note 1
70
90
-
70
90
-
dB
Power Supply Rejection Ratio
PSRR
RS≥10KΩ Note 1
77
96
-
77
96
-
dB
V
Note :
1. LM348: 0 ≤ TA ≤ +70 °C , LM248: -25 ≤ TA ≤ +85 °C
2. Guaranteed by design.
3
Order this document
by 4N35/D
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
[CTR = 100% Min]
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
*Motorola Preferred Device
• Current Transfer Ratio — 100% Minimum @ Specified Conditions
• Guaranteed Switching Speeds
STYLE 1 PLASTIC
• Meets or Exceeds all JEDEC Registered Specifications
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
• General Purpose Switching Circuits
6
• Interfacing and coupling systems of different potentials and impedances
1
STANDARD THRU HOLE
CASE 730A–04
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
6
Volts
Forward Current — Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
PD
120
mW
1.41
mW/°C
1
6
2
5
3
4
INPUT LED
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
30
Volts
Emitter–Base Voltage
VEBO
7
Volts
Collector–Base Voltage
VCBO
70
Volts
Collector Current — Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
PD
150
mW
1.76
mW/°C
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.94
mW
mW/°C
Ambient Operating Temperature Range(2)
TA
– 55 to +100
°C
Tstg
– 55 to +150
°C
TL
260
°C
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
TOTAL DEVICE
Isolation Source Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Storage Temperature Range(2)
Soldering Temperature (10 sec, 1/16″ from case)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 2
Optoelectronics
Device Data
Motorola
Motorola, Inc.
1995
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Symbol
Min
Typ(1)
Max
Unit
VF
0.8
0.9
0.7
1.15
1.3
1.05
1.5
1.7
1.4
V
Reverse Leakage Current (VR = 6 V)
IR
—
—
10
µA
Capacitance (V = 0 V, f = 1 MHz)
CJ
—
18
—
pF
Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C)
Collector–Emitter Dark Current (VCE = 30 V, TA = 100°C)
ICEO
—
—
1
—
50
500
nA
µA
Collector–Base Dark Current (VCB = 10 V)
ICBO
—
0.2
100
20
—
nA
Collector–Emitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
45
—
V
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
70
100
—
V
Emitter–Base Breakdown Voltage (IE = 100 µA)
V(BR)EBO
7
7.8
—
V
DC Current Gain (IC = 2 mA, VCE = 5 V)
hFE
—
400
—
—
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
—
7
—
pF
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
CCB
—
19
—
pF
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CEB
—
9
—
pF
IC (CTR)(2)
10 (100)
4 (40)
4 (40)
30 (300)
—
—
—
—
—
mA (%)
VCE(sat)
—
0.14
0.3
V
ton
—
7.5
10
µs
toff
—
5.7
10
tr
—
3.2
—
tf
—
4.7
—
VISO
7500
—
—
Vac(pk)
IISO
—
—
—
—
—
8
100
100
100
µA
RISO
1011
—
—
Ω
CISO
—
0.2
2
pF
Characteristic
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
OUTPUT TRANSISTOR
TA = 25°C
TA = 100°C
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
TA = 25°C
TA = –55°C
TA = 100°C
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
Turn–On Time
Turn–Off Time
Rise Time
(IC = 2 mA, VCC = 10 V,
RL = 100 Ω)(3)
Fall Time
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Current(4) (VI–O = 3550 Vpk)
Isolation Current (VI–O = 2500 Vpk)
Isolation Current (VI–O = 1500 Vpk)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
1.
2.
3.
4.
2
4N35
4N36
4N37
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
For test circuit setup and waveforms, refer to Figure 11.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Motorola Optoelectronics Device Data
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
4N29
4N30
4N31
4N32
4N33
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
SCHEMATIC
ANODE 1
6 BASE
APPLICATIONS
•
•
•
•
•
Low power logic circuits
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
ABSOLUTE MAXIMUM RATINGS
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
(TA = 25°C Unless otherwise specified.)
Parameter
Symbol
Value
Units
TSTG
-55 to +150
°C
Operating Temperature
TOPR
-55 to +100
°C
Lead Solder Temperature
TSOL
260 for 10 sec
°C
250
mW
3.3
mW/°C
IF
80
mA
VR
3
V
TOTAL DEVICE
Storage Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
PD
3.0
A
150
mW
2.0
mW/°C
BVCEO
30
V
Collector-Base Breakdown Voltage
BVCBO
30
V
Emitter-Collector Breakdown Voltage
BVECO
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Continuous Collector Current
IF(pk)
PD
PD
IC
5
V
150
mW
2.0
mW/°C
150
mA
4/25/00
200038B
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4N29
ELECTRICAL CHARACTERISTICS
4N30
4N31
4N32
4N33
(TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
EMITTER
V
V
(VR = 3.0 V)
IR
0.001
100
µA
(VF = 0 V, f = 1.0 MHz)
C
150
*Collector-Base Breakdown Voltage
(IC = 100 µA, IE = 0)
*Emitter-Collector Breakdown Voltage
(IE = 100 µA, IB = 0)
DC Current Gain
Unit
1.5
BVCEO
*Collector-Emitter Dark Current
Max
1.2
(IC = 100 µA, IB = 0)
*Collector-Emitter Breakdown Voltage
Typ
VF
*Reverse Leakage Current
DETECTOR
Min
(IF = 10 mA)
*Input Forward Voltage
*Capacitance
Symbol
pF
30
60
BVCBO
30
100
V
BVECO
5.0
8
V
(VCE = 10 V, Base Open)
ICEO
1
(VCE = 5.0 V, IC = 500 µA)
hFE
5000
100
nA
Max
Units
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions
Symbol
*Collector Output Current(1,2) (4N32, 4N33)
Min
Typ
50 (500)
(4N29, 4N30) (IF = 10 mA, VCE = 10 V, IB = 0) IC (CTR)
(4N31)
10 (100)
mA (%)
5 (50)
*Saturation Voltage(2) (4N29, 4N30, 4N32, 4N33)
(4N31)
(IF = 8.0 mA, IC = 2.0 mA)
1.0
VCE(sat)
1.2
V
TRANSFER CHARACTERISTICS
AC Characteristic
Turn-on
Test Conditions
Time(3)
Turn-off Time(3)
(4N32, 4N33)
(IF = 200 mA, IC = 50 mA, VCC = 10 V)
(Fig.7)
(4N29, 4N30, 4N31)
Symbol
Min
Typ
Units
5.0
ton
100
toff
Bandwidth(4,5)
Max
µs
40
BW
30
KHz
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Input-Output Isolation Voltage(6)
(4N29, 4N30, 4N31, 4N32, 4N33)
Isolation Resistance(6)
Isolation
Capacitance(6)
Symbol
(II-O 61 µA, Vrms, t = 1 min.)
*(4N32)
VDC
*(4N33)
VDC
Min
Typ
Max
5300
VISO
Units
Vac(rms)
2500
V
1500
(VI-O = 500 VDC)
RISO
1011
1
(VI-O = , f = 1 MHz)
CISO
0.8
pf
4/25/00
200038B