n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Equivalent Circuit n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 ± 20 50 100 50 100 250 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=300V IC=50A VGE=± 15V RG=51Ω IF=50A VGE=0V IF=50A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 3300 730 330 0.6 0.2 0.6 0.2 Max. 1.0 15 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.05 Max. 0.50 1.33 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 125 125 V GE = 20V, 15V, 12V, V GE = 20V, 15V, 12V 100 75 10V C 10V Collector current : I Collector current : I 75 [A] C [A] 100 50 25 50 25 8V 8V 0 0 0 1 2 3 4 5 0 4 5 Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C CE [V] [V] 10 Collector-Emitter voltage V 8 6 IC= 4 100A 50A 2 25A 0 8 6 IC= 4 100A 50A 2 25A 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : V GE [V] 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =51 Ω , V GE =±15V, T j=25°C V CC =300V, R G =51 Ω , V GE =±15V, Tj=125°C 1000 1000 t off tr tf tr tf 100 Switching time : t 100 t on [nsec] t off on, t r, t off, t f [nsec] t on on, t r, t off, t f Switching time : t 3 Collector-Emitter vs. Gate-Emitter voltage 10 CE 2 Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V] Collector-Emitter voltage :V 1 10 10 0 20 40 60 Collector current : I C [A] 80 0 20 40 60 Collector current : I C [A] 80 Switching time vs. R G Dynamic input characteristics T j=25°C V CC =300V, I C =50A, V GE =±15V, T j=25°C 500 25 300V 400 Collector-Emitter voltage : V tf 100 10 10 20 400V CE [nsec] on, t r, t off, t f tr Switching time : t t off V CC =200V [V] t on 1000 300 15 200 10 100 5 0 0 100 50 100 Gate resistance : R G [ Ω ] 150 200 0 300 250 Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr, I rr vs. I F 125 75 50 25 t rr 125°C rr :t Reverse recovery current : I Forward current : I F [A] rr [A] 100 [nsec] 25°C Reverse recovery time T j=125°C 100 t rr 25°C I rr 125°C I rr 25°C 10 0 0 1 2 3 4 0 20 Forward voltage : V F [V] 40 60 80 Forward current : I F [A] Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125°C, R G >51 Ω Transient thermal resistance Diode 1 Thermal resistance : R Collector current : Ic [A] 400 th(j-c) [°C/W] 500 IGBT 0,1 SCSOA 300 (non-repetitive pulse) 200 100 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 Pulse width : PW [sec] 1 0 100 200 300 400 500 Collector-Emitter voltage : V CE [V] 600 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current V CC=300V, R G =51 Ω , V GE =±15V T j=25°C 5 E off 25°C ies , Switching loss : E E on 125°C Eon 25°C Capacitance : C 3 10 C oes , C res [nF] 4 on, E off, E rr [mJ/cycle] E off 125°C 2 1 E rr 125°C C ies 1 C oes C res 0,1 E rr 25°C 0 0 20 40 60 80 0 Collector Current : I C [A] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Specification is subject to change without notice May 97