MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance of these devices makes them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 17 dB Efficiency — 26% Adjacent Channel Power – 750 kHz: –45.0 dBc @ 30 kHz BW 1.98 MHz: –60.0 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Ease of Design for Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters 880 MHz, 170 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 375D–01, STYLE 2 (MRF9180) CASE 375E–01, STYLE 2 (MRF9180S) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS + 15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 388 2.22 Watts W/°C Storage Temperature Range Tstg – 65 to +200 °C TJ 200 °C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.45 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 RF DEVICE DATA Motorola, Inc. 2001 MRF9180 MRF9180S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 6 — S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 77 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 3.8 — pF Gps 16 17.5 — dB η 35 39 — % IMD — –31 –28 dBc IRL 9 15 — dB Gps — 17.5 — dB η — 38.5 — % IMD — –31 — dBc IRL — 13 — dB P1dB — 170 — W OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 700 mA, f1 = 880.0 MHz) (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF9180 MRF9180S 2 RF DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) (continued) Characteristic Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 700 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Symbol Min Typ Max Unit Gps — 16.5 — dB η — 55 — % Ψ No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push–pull configuration. RF DEVICE DATA MRF9180 MRF9180S 3 B2 VGG B6 B4 + + C16 C14 C13 C22 C26 Z18 Z20 Z22 Z2 L1 Z3 C3 Z4 Z12 C6 Z9 Z11 C2 Z5 Z14 COAX 3 Z16 C18 L4 C7 C4 Z7 C1 Z10 Z24 C17 C10 Z8 C28 C20 COAX 1 Z6 VDD + L3 R1 RF INPUT Z1 + C27 C8 Z15 Z13 C5 DUT Z26 Z28 Z17 Z29 C9 RF OUTPUT C29 Z27 R2 COAX 2 COAX 4 B1 VGG B3 + C11 Z19 C12 Z21 C15 Z23 Z25 C19 L2 B5 + C21 B1, B2, B5, B6 B3, B4 C1 C2, C3, C5, C6, C12, C14, C19, C20, C21, C22 C4, C9, C10, C15, C16 C7 C8 C11, C13 C17 C18 C23, C24, C26, C27 C25, C28 C29 Coax1, Coax2 Coax3, Coax4 L1, L2, L3 L4 R1, R2 Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 0.6–4.5 pF, Variable Capacitor 47 pF, Chip Capacitors, B Case 12 pF, Chip Capacitors, B Case 0.8–9.1 pF, Variable Capacitor 7.5 pF, Chip Capacitor, B Case 10 µF, 35 V Tantalum Surface Mount Chip Capacitors 3.6 pF, Chip Capacitor, B Case 5.1 pF, Chip Capacitor, B Case 22 µF, 35 V Tantalum Surface Mount Chip Capacitors 220 µF, 50 V Electrolytic Capacitors 0.4–2.5 pF, Variable Capacitor 25 Ω, Semi Rigid Coax, 70 mil OD, 1.05″ Long 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05″ Long 18.5 nH, Mini Spring Inductors, Coilcraft 12.5 nH, Mini Spring Inductor, Coilcraft 510 Ω, 1/10 W Chip Resistors Z1 Z2 Z3 Z4, Z5, Z26, Z27 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z28 Z29 Board Material + C23 VDD + C24 C25 T-Line, 0.420″ x 0.080″ T-Line, 0.190″ x 0.080″ T-Line, 0.097″ x 0.080″ T-Line, 2.170″ x 0.080″ T-Line, 0.075″ x 0.080″ T-Line, 0.088″ x 0.220″ T-Line, 0.088″ x 0.220″ T-Line, 0.460″ x 0.220″ T-Line, 0.685″ x 0.625″ T-Line, 0.055″ x 0.625″ T-Line, 0.055″ x 0.632″ T-Line, 0.685″ x 0.632″ T-Line, 0.732″ x 0.080″ T-Line, 0.060″ x 0.080″ T-Line, 0.230″ x 0.080″ T-Line, 0.460″ x 0.080″ 30 mil Teflon, εr = 2.55, Copper Clad, 2 oz Cu Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180 MRF9180S 4 RF DEVICE DATA C13 VGG B6 MRF9180 900MHz PUSH PULL Rev 01 B4 B2 C26 C27 VDD C28 C22 C14 Resistor C16 C10 R1 L3 L4 C4 C6 C5 C8 C7 C1 R2 Resistor C9 CUT OUT AREA C2 C3 L1 C20 C17 C18 C15 C29 C19 L2 C12 C21 C11 VGG B1 B3 B5 C25 C23 C24 VDD Figure 2. 880 MHz Broadband Test Circuit Component Layout RF DEVICE DATA MRF9180 MRF9180S 5 G ps , POWER GAIN (dB) 16 45 40 h VDD = 26 Vdc Pout = 170 Watts (PEP) IDQ = 2 700 mA 15 35 14 13 –30 –32 IMD 12 –34 IRL Two–Tone Measurement 100 kHz Tone Spacing 11 10 860 865 870 875 880 885 f, FREQUENCY (MHz) 890 –36 –38 900 895 –10 –12 –14 –16 –18 IRL, INPUT RETURNLOSS (dB) Gps 17 IMD, INTERMODULATION DISTORTION (dBc) 50 18 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ 2000 mA G ps , POWER GAIN (dB) 18 1700 mA 1400 mA 17 1100 mA 16 15 14 VDD = 26 Vdc f1 = 880 MHz f2 – 880.1 MHz 800 mA 1 –10 –20 –30 880 mA 1100 mA –40 1400 mA Figure 4. Power Gain versus Output Power 1 2000 mA 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power –10 –20 60 VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 = 880.1 MHz 18 –30 –40 –50 3rd Order –60 –70 5th Order 1 7th Order 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power MRF9180 MRF9180S 6 50 Gps Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 1700 mA –50 –60 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz 16 40 14 30 12 20 10 h 8 0.1 f1 = 880 MHz IDQ = 2 700 mA VDD = 26 Vdc 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. h, DRAIN EFFICIENCY (%) 19 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance 10 0 1000 Figure 7. Power Gain and Efficiency versus Output Power RF DEVICE DATA G ps , POWER GAIN (dB) 40 14 20 12 VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 – 880.1 MHz h 10 8 6 –20 –40 IMD 1 0 10 100 –60 40 Gps 16 14 20 VDD = 26 Vdc IDQ = 2 700 mA f = 880 MHz IS-97, Pilot, Sync, Paging Traffic Codes 8 through 13 h 12 10 –20 –40 750 MHz 8 –60 1.98 MHz 6 1 –80 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Power Gain, Efficiency and IMD versus Output Power Figure 9. Power Gain, Efficiency and ACPR versus Output Power RF DEVICE DATA 0 MRF9180 MRF9180S 7 h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) Gps 16 18 G ps , POWER GAIN (dB) 60 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 Zo = 10 Ω ZOL* Zin f = 895 MHz f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W (PEP) f MHz Zin ZOL* Ω Zin Ω 865 2.95 + j0.00 3.83 + j1.02 880 2.48 + j0.67 3.55 + j1.38 895 2.44 + j1.18 3.34+ j1.51 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance MRF9180 MRF9180S 8 RF DEVICE DATA NOTES RF DEVICE DATA MRF9180 MRF9180S 9 NOTES MRF9180 MRF9180S 10 RF DEVICE DATA PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G L Q 2 PL 0.25 (0.010) 1 M T B M DIM A B C D E F G H K L M N Q R S 2 S R –B– 3 4 D K 4 PL N M H C –T– E SEATING PLANE F INCHES MIN MAX 1.610 1.630 0.390 0.410 0.150 0.180 0.450 0.470 0.060 0.068 0.003 0.006 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.225 1.235 1.219 1.241 0.120 0.130 0.350 0.370 0.360 0.380 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 40.89 41.40 9.91 10.41 3.81 4.57 11.43 11.94 1.52 1.73 0.08 0.15 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 31.12 31.37 30.96 31.52 3.05 3.30 8.89 9.40 9.14 9.65 DRAIN DRAIN GATE GATE SOURCE CASE 375D–01 ISSUE 0 (MRF9180) A RADIUS Q 4 PL L 1 2 S R DIM A B C D E F H K L M N Q R S –B– 4 3 D K 4 PL N M F C –T– H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E INCHES MIN MAX 1.325 1.335 0.390 0.410 0.150 0.180 0.450 0.470 0.060 0.068 0.003 0.006 0.079 0.089 0.117 0.137 0.540 BSC 1.225 1.235 1.219 1.241 0.030 BSC 0.350 0.370 0.360 0.380 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.66 33.91 9.91 10.41 3.81 4.57 11.43 11.94 1.52 1.73 0.08 0.15 2.01 2.26 2.97 3.48 13.72 BSC 31.12 31.37 30.96 31.52 0.76 BSC 8.89 9.40 9.14 9.65 DRAIN DRAIN GATE GATE SOURCE CASE 375E–01 ISSUE O (MRF9180S) RF DEVICE DATA MRF9180 MRF9180S 11 Motorola reserves the right to make changes without further notice to any products herein. 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