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UTC2SB772

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UTC 2SB772
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
1
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
TO-126
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
VCBO
VCEO
VEBO
Pc
Pc
Ic
Ic
IB
Tj
TSTG
-40
-30
-5
10
1
-3
-7
-0.6
150
-55 ~ +150
V
V
V
W
W
A
A
A
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation( Tc=25°C)
Collector Dissipation( Ta=25°C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
ICBO
IEBO
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
UTC
TEST CONDITIONS
VCB=-30V,IE=0
VEB=-3V,Ic=0
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
Ic=-2A,IB=-0.2A
Ic=-2A,IB=-0.2A
VCE=-5V,Ic=-0.1A
VCB=-10V,IE=0,f=1MHz
UNISONIC TECHNOLOGIES
MIN
30
100
TYP
200
150
-0.3
-1.0
80
45
MAX
UNIT
-1000
-1000
nA
nA
400
-0.5
-2.0
CO. LTD
V
V
MHz
pF
1
QW-R204-002,A
UTC 2SB772
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.2 Derating curve of safe
operating areas
Fig.1 Static characteristics
Fig.3 Power Derating
-IB=6mA
-IB=5mA
0.8
-IB=4mA
100
S/
b
50
ite
d
lim
0
4
8
12
16
20
0
-50
-Collector-Emitter voltage(V)
0
50
100
150
200
-50
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
0
10
10
0
-1
10
VCE=5V
2
10
IB=8mA
1
10
0
10
-3
10
1
10
-Ic,Collector current(A)
FT(MHz), Current gainbandwidth product
-2
10
-2
10
-1
10
10
0
1
10
Ic(max),Pulse
Ic(max),DC
10
Fig.7 DC current gain
150
200
10
mS
1m
S
0
-1
10
-2
10
10
0
1
10
2
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
100
S
1m
0.
1
10
50
Fig.6 Safe operating area
3
10
IE=0
f=1MHz
0
Tc,Case Temperature(°C)
Fig.5 Current gainbandwidth product
3
10
2
10
4
d
-IB=1mA
0
8
ite
-IB=2mA
0
Output Capacitance(pF)
lim
n
-IB=3mA
0.4
12
Power Dissipation(W)
1.2
- Ic Derating(%)
-IB=9mA
-IB=8MA
-IB=7mA
io
at
ip
ss
Di
-Ic,Collector current(A)
150
1.6
Fig.8 Saturation Voltage
3
10
4
10
-Saturation Voltage(mV)
DC current Gain,H
FE
VCE=-2V
2
10
1
10
0
10
0
10
1
10
2
10
3
10
-Ic,Collector current(mA)
UTC
4
10
VBE(sat)
3
10
2
10
VCE(sat)
1
10
0
10
0
10
1
10
2
10
3
10
4
10
-Ic,Collector current(mA)
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R204-002,A
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