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B-stad CH 05

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Electronic Devices and Circuit Theory
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BJT AC Analysis
Chapter 5
Ch.5 Summary
BJT Transistor Modeling
A model is an equivalent circuit that represents
the AC characteristics of the transistor.
A model uses circuit elements that approximate
the behavior of the transistor.
There are two models commonly used in small
signal AC analysis of a transistor:
re model
Hybrid equivalent model
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Ch.5 Summary
The re Transistor Model
BJTs are basically current-controlled devices; therefore
the re model uses a diode and a current source to
duplicate the behavior of the transistor.
One disadvantage to this model is its sensitivity to the
DC level. This model is designed for specific circuit
conditions.
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Ch.5 Summary
Common-Base Configuration
Input impedance:
re 
26 mV
Ie
Zi  re
Output impedance:
Zo  
Voltage gain:
AV 
RL RL

re
re
Current gain:
Ai    1
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Ch.5 Summary
Common-Emitter Configuration
The diode re model
can be replaced by
the resistor re.
Ie    1 Ib  Ib
re 
26 mV
Ie
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Ch.5 Summary
Common-Emitter Configuration
Input impedance:
Zi  re
Output impedance:
Zo  ro  
Voltage gain:
AV  
RL
re
Current gain:
Ai   ro 
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Ch.5 Summary
Common-Collector Configuration
Input impedance:
Zi  (  1)re
Output impedance:
Zo  re || RE
Voltage gain:
AV 
RE
RE  re
Current gain:
Ai  β  1
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Ch.5 Summary
The Hybrid Equivalent Model
Hybrid parameters are developed and used for modeling the
transistor. These parameters can be found on a transistor’s
specification sheet:
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)  0
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
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Ch.5 Summary
Simplified General h-Parameter Model
hi = input resistance
hf = forward transfer current ratio (Io/Ii)
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Ch.5 Summary
re vs. h-Parameter Model
Common-Emitter
hie  βre
hfe  βac
Common-Base
hib  re
hfb  α  1
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Ch.5 Summary
The Hybrid  Model
The hybrid pi model is most useful for analysis
of high-frequency transistor applications.
At lower frequencies the hybrid pi model closely
approximate the re parameters, and can be
replaced by them.
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Ch.5 Summary
Common-Emitter Fixed-Bias
Configuration
The input is applied to the base
The output is taken from the
collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180
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Ch.5 Summary
Common-Emitter
Fixed-Bias
Configuration
AC equivalent
re,model
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Ch.5 Summary
Common-Emitter
Fixed-Bias
Calculations
Input
impedance:
Output
impedance:
Zi  RB||β|e
Zi  βre
Zo  RC||rO
Zo  RC
Av 
Voltage gain:
Av  
RC
re
Current gain:
Ai 
ro 10 RC
Io
βRB ro

Ii (ro  RC )(RB  βre )
Ai  β
ro 10RC
Vo
(R ||r )
 C o
Vi
re
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RE 10 βre
Current gain
from voltage gain:
ro 10 RC , R B 10 βre
Ai   AV
Zi
RC
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Ch.5 Summary
Common-Emitter Voltage-Divider Bias
re model requires you to
determine , re, and ro.
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Ch.5 Summary
Current gain
Common-Emitter
Voltage-Divider Bias
Calculations
Input impedance
Io
R ro

Ii (ro  RC )(R   re )
I
R 
Ai  o 
r 10R
Ii R   re o C
Ai 
Output impedance
R  R1 || R2
Zi  R || βre
Zo  RC || ro
Zo  RC
ro 10RC
Ai 
Io
  ro 10R C , R10 re
Ii
Current gain from Av
Ai   Av
Zi
RC
Voltage gain
Av 
Vo  RC || ro

Vi
re
Av 
Vo
R
 C
Vi
re
ro 10R C
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Ch.5 Summary
Common-Emitter Emitter-Bias
Configuration
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Ch.5 Summary
Impedance Calculations
Input impedance:
Zi  RB || Zb
Zb  re  (   1)RE
Zb  (re  RE )
Zb  RE
Output impedance:
Zo  RC
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Ch.5 Summary
Gain Calculations
Voltage gain:
Av 
Vo
R
 C
Vi
Zb
Av 
Vo
RC

Vi
re  RE
Av 
Vo
R
 C
Vi
RE
Z b (re  RE )
Z b   RE
Current gain:
Ai 
Io
RB

Ii RB  Zb
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Current gain from Av:
Ai   Av
Zi
RC
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Ch.5 Summary
Emitter-Follower Configuration
This is also known as the common-collector configuration.
The input is applied to the base and the output is taken from the emitter.
There is no phase shift between input and output.
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Ch.5 Summary
Impedance
Calculations
Input impedance:
Zi  RB ||Zb
Zb  βre  (β  1)RE
Zb  β(re  RE )
Zb  βRE
Output impedance:
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Zo  RE||re
Zo  re
RE re
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Ch.5 Summary
Gain Calculations
Voltage gain:
Av 
Vo
RE

Vi RE  re
Av 
Vo
1
Vi
RE  re , R E  re  RE
Current gain:
Ai  
βRB
RB  Zb
Current gain from voltage gain:
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Ai   Av
Zi
RE
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Ch.5 Summary
Common-Base Configuration
The input is applied to the emitter
The output is taken from the
collector
Low input impedance.
High output impedance
Current gain less than unity
Very high voltage gain
No phase shift between input
and output
Electronic Devices and Circuit Theory
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Ch.5 Summary
Calculations
Input impedance:
Zi  RE || re
Output impedance:
Zo  RC
Voltage gain:
Av 
Vo RC RC


Vi
re
re
Current gain:
Ai 
Io
   1
Ii
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Ch.5 Summary
Common-Emitter Collector Feedback
Configuration
•
•
•
•
A variation of the common-emitter fixed-bias configuration
Input is applied to the base
Output is taken from the collector
There is a 180 phase shift between the input and output
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Ch.5 Summary
Calculations
Input impedance:
Output impedance:
Voltage gain:
Av 
Zi 
re
1 RC

β RF
Zo  RC || RF
Vo
R
 C
Vi
re
Current gain:
Ai 
Io
βRF

Ii
RF  βRC
Ai 
Io
R
 F
Ii
RC
Electronic Devices and Circuit Theory
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Ch.5 Summary
Collector DC Feedback
Configuration
This is a variation of the commonemitter, fixed-bias configuration
• The input is applied to the
base
• The output is taken from
the collector
• There is a 180 phase shift
between input and output
Electronic Devices and Circuit Theory
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Ch.5 Summary
Calculations
Input impedance:
Zi 
re
1 RC

β RF
Output impedance:
Zo  RC||RF
Voltage gain:
Av 
Vo
R
 C
Vi
re
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Current gain:
Ai 
Io
RF

Ii
RF  RC
Ai 
Io
R
 F
Ii
RC
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Ch.5 Summary
Two-Port Systems Approach
With Vi set to 0 V:
ZTh  Zo  Ro
The voltage across
the open terminals is:
ETh  AvNLVi
where AvNL is the noload voltage gain
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Ch.5 Summary
Effect of Load Impedance on Gain
This model can be applied
to any current- or voltagecontrolled amplifier.
Adding a load reduces the
gain of the amplifier:
V
RL
Av  o 
AvNL
Vi RL  Ro
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Zi
Ai   Av
RL
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Ch.5 Summary
Effect of Source Impedance on Gain
The amplitude of the
applied signal that
reaches the input of
the amplifier is:
Vi 
RiVs
Ri  Rs
The internal resistance of the signal source reduces the overall
gain:
Avs 
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Vo
Ri

AvNL
Vs Ri  Rs
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Ch.5 Summary
Combined Effects of RS and RL on
Voltage Gain
Effects of RL:
Av 
Vo RL AvNL

Vi RL  Ro
Ai   Av
Ri
RL
Avs 
Effects of RL and RS:
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Vo
Ri
RL

AvNL
Vs Ri  Rs RL  Ro
Ais   Avs
Rs  Ri
RL
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Ch.5 Summary
Cascaded Systems
• The output of one amplifier is the input to the next
amplifier
• The overall voltage gain is determined by the product of
gains of the individual stages
• The DC bias circuits are isolated from each other by the
coupling capacitors
• The DC calculations are independent of the cascading
• The AC calculations for gain and impedance are
interdependent
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Ch.5 Summary
R-C Coupled BJT Amplifiers
Voltage gain:
Av 1 
RC || R1 || R2 || Re
re
Av 2 
RC
re
Av  Av 1Av 2
Input impedance,
first stage:
Zi  R1 || R2 || Re
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Output impedance,
second stage:
Zo  RC
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Ch.5 Summary
Cascode Connection
This example is a CE–CB
combination. This arrangement
provides high input impedance
but a low voltage gain.
The low voltage gain of the
input stage reduces the Miller
input capacitance, making this
combination suitable for highfrequency applications.
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Ch.5 Summary
Darlington Connection
The Darlington circuit provides
very high current gain, equal to the
product of the individual current
gains:
D = 1 2
The practical significance is that
the circuit provides a very high
input impedance.
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Ch.5 Summary
DC Bias of Darlington Circuits
Base current:
IB 
VCC  VBE
RB  DRE
Emitter current:
IE  (D  1)IB  DIB
Emitter voltage:
VE  IE RE
Base voltage:
VB  VE  VBE
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Ch.5 Summary
Feedback Pair
This is a two-transistor circuit that operates like a Darlington
pair, but it is not a Darlington pair.
It has similar characteristics:
• High current gain
• Voltage gain near unity
• Low output impedance
• High input impedance
The difference is that a Darlington uses a pair of like
transistors, whereas the feedback-pair configuration uses
complementary transistors.
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Ch.5 Summary
Current Mirror Circuits
Current mirror
circuits provide
constant current in
integrated circuits.
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Ch.5 Summary
Current Source Circuits
Constant-current sources can be built using FETs, BJTs, and
combinations of these devices.
I  IE 
VZ  VBE
RE
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IE  IC
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Ch.5 Summary
Current Source Circuits
VGS = 0V
ID = IDSS = 10 mA
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Ch.5 Summary
Fixed-Bias
Input impedance:
Zi  RB || hie
Output impedance:
Zo  RC || 1/ hoe
Voltage gain:
Av 
Vo
h R || 1/ ho e 
  fe C
Vi
hie
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Current gain:
Ai 
Io
 hfe
Ii
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Ch.5 Summary
Voltage-Divider Configuration
Input impedance:
Zi  R || hie
Output impedance:
Zo  RC
Voltage gain:
Av  
Current gain:
Ai  
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hfe RC || 1/hoe 
hie
hfe R
R  hie
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Ch.5 Summary
Emitter-Follower Configuration
Input impedance:
Zb  hfe RE
Zi  Ro || Zb
Z b  h fe R E
Z i  R o || Z b
Output impedance:
Zo  RE ||
hie
hfe
Voltage gain:
Av 
Vo
RE

Vi RE  hie / hfe
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Ai 
Current gain:
hfe RB
RB  Zb
Ai   Av
Zi
RE
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Ch.5 Summary
Common-Base Configuration
Input impedance:
Zi  RE || hib
Output impedance:
Zo  RC
Voltage gain:
Av 
Vo
h R
  fb C
Vi
hib
Current gain:
Ai 
Io
 hfb  1
Ii
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Ch.5 Summary
Troubleshooting
Check the DC bias voltages
 If not correct, check power supply, resistors,
transistor. Also check the coupling capacitor
between amplifier stages.
Check the AC voltages
 If not correct check transistor, capacitors and
the loading effect of the next stage.
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