FMMT555

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT555
ISSUE 4 – AUGUST 2003
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
TYPICAL CHARACTERISTICS
ZTX554/55-2
tr
ns
Switching time
200
2
-0.001
-0.01
-0.1
200
1
0
-1
400 100
0
-0.01
tr
IC - Collector Current (Amps)
80
-1.2
VCE=-10V
VBE(sat) - (Volts)
hFE - Normalised Gain (%)
-1.4
40
20
-0.0001
-0.001
-0.01
-0.1
VCEO
-150
V
-0.8
-0.6
-0.1
-1
-5
V
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb = 25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
SYMBOL
MIN.
UNIT
CONDITIONS.
V(BR)CBO
-160
V
IC=-100 A
-0.6
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-150
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100 A
Collector Cut-Off Current
ICBO
-0.1
-10
Emitter Cut-Off Current
IEBO
-0.1
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-on Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
-0.0001
IC-Collector Current (A)
-1.0
VEBO
PARAMETER
10
VCE=-10V
Emitter-Base Voltage
Peak Pulse Current
-0.8
1
-1.4
-0.001
-0.01
-0.1
-1
Single Pulse Test at Tamb=25°C
1
0.1
0.01
0.001
0.1V
DC
1s
100ms
10ms
1ms
100s
1V
10V
100V
1000V
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
50
50
MAX
VCB =-140V
VCB =-140V, Tamb =100°C
A
A
VEB=-4V
A
V
IC=-100mA, IB=-10mA*
-1
V
IC=-100mA, IB=-10mA*
-1
V
IC=-100mA, VCE =-10V*
IC=-10mA, VCE =-10V*
IC=-300mA, VCE =-10V*
300
100
10
MHz
IC=-50mA, VCE =-10V
f=100MHz
pF
VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
VBE - (Volts)
V
Collector-Emitter Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VBE(sat) v IC
-0.01
UNIT
-160
-1.0
hFE v IC
-0.001
VALUE
VCBO
IC/IB=10
IC - Collector Current (Amps)
-0.0001
SYMBOL
Collector-Base Voltage
-1
IC - Collector Current (Amps)
-1.2
PARAMETER
0
Switching Speeds
100
0
-0.1
50
IC - Collector Current (Amps)
VCE(sat) v IC
60
0
SOT23
ABSOLUTE MAXIMUM RATINGS.
3 - 132
3 - 131
-0.0001
600 td
ns
td
100
0
555
B
800
tf
PARTMARKING DETAIL –
VCE(sat) - (Volts)
4
3
FMMT455
-0.2
400
300
COMPLEMENTARY TYPE –
-0.4
tf
ns
1000
ts
5
-0.6
ts
µs
500
E
C
IB1=IB2=IC/10
-0.8
IC/IB=10
FMMT555
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT555
ISSUE 3 – JANUARY 1996
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
TYPICAL CHARACTERISTICS
ZTX554/55-2
tr
ns
Switching time
200
2
-0.001
-0.01
-0.1
200
1
0
-1
400 100
0
-0.01
tr
IC - Collector Current (Amps)
80
-1.2
VCE=-10V
VBE(sat) - (Volts)
hFE - Normalised Gain (%)
-1.4
40
20
-0.0001
-0.001
-0.01
-0.1
VCEO
-150
V
-0.8
-0.6
-0.1
-1
-5
V
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb = 25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
SYMBOL
MIN.
UNIT
CONDITIONS.
V(BR)CBO
-160
V
IC=-100 A
-0.6
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-150
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100 A
Collector Cut-Off Current
ICBO
-0.1
-10
Emitter Cut-Off Current
IEBO
-0.1
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-on Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
-0.0001
IC-Collector Current (A)
-1.0
VEBO
PARAMETER
10
VCE=-10V
Emitter-Base Voltage
Peak Pulse Current
-0.8
1
-1.4
-0.001
-0.01
-0.1
-1
Single Pulse Test at Tamb=25°C
1
0.1
0.01
0.001
0.1V
DC
1s
100ms
10ms
1ms
100s
1V
10V
100V
1000V
VCE - Collector Emitter Voltage (V)
IC - Collector Current (Amps)
VBE(on) v IC
Safe Operating Area
50
50
MAX
VCB =-140V
VCB =-140V, Tamb =100°C
A
A
VEB=-4V
A
V
IC=-100mA, IB=-10mA*
-1
V
IC=-100mA, IB=-10mA*
-1
V
IC=-100mA, VCE =-10V*
IC=-10mA, VCE =-10V*
IC=-300mA, VCE =-10V*
300
100
10
MHz
IC=-50mA, VCE =-10V
f=100MHz
pF
VCB =-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
VBE - (Volts)
V
Collector-Emitter Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VBE(sat) v IC
-0.01
UNIT
-160
-1.0
hFE v IC
-0.001
VALUE
VCBO
IC/IB=10
IC - Collector Current (Amps)
-0.0001
SYMBOL
Collector-Base Voltage
-1
IC - Collector Current (Amps)
-1.2
PARAMETER
0
Switching Speeds
100
0
-0.1
50
IC - Collector Current (Amps)
VCE(sat) v IC
60
0
SOT23
ABSOLUTE MAXIMUM RATINGS.
3 - 132
3 - 131
-0.0001
600 td
ns
td
100
0
555
B
800
tf
PARTMARKING DETAIL –
VCE(sat) - (Volts)
4
3
FMMT455
-0.2
400
300
COMPLEMENTARY TYPE –
-0.4
tf
ns
1000
ts
5
-0.6
ts
µs
500
E
C
IB1=IB2=IC/10
-0.8
IC/IB=10
FMMT555