Giant conductivity switching of LaAlO3-SrTiO3

ARTICLE
Received 12 Aug 2015 | Accepted 11 Jan 2016 | Published 10 Feb 2016
DOI: 10.1038/ncomms10681
OPEN
Giant conductivity switching of LaAlO3/SrTiO3
heterointerfaces governed by surface protonation
Keith A. Brown1,*,w, Shu He1,*, Daniel J. Eichelsdoerfer1,*, Mengchen Huang2,3, Ishan Levy2,3, Hyungwoo Lee4,
Sangwoo Ryu4, Patrick Irvin2,3, Jose Mendez-Arroyo1, Chang-Beom Eom4, Chad A. Mirkin1 & Jeremy Levy2,3
Complex-oxide interfaces host a diversity of phenomena not present in traditional
semiconductor heterostructures. Despite intense interest, many basic questions remain
about the mechanisms that give rise to interfacial conductivity and the role of surface
chemistry in dictating these properties. Here we demonstrate a fully reversible 44 order of
magnitude conductance change at LaAlO3/SrTiO3 (LAO/STO) interfaces, regulated by LAO
surface protonation. Nominally conductive interfaces are rendered insulating by solvent
immersion, which deprotonates the hydroxylated LAO surface; interface conductivity is
restored by exposure to light, which induces reprotonation via photocatalytic oxidation of
adsorbed water. The proposed mechanisms are supported by a coordinated series of
electrical measurements, optical/solvent exposures, and X-ray photoelectron spectroscopy.
This intimate connection between LAO surface chemistry and LAO/STO interface physics
bears far-reaching implications for reconfigurable oxide nanoelectronics and raises the
possibility of novel applications in which electronic properties of these materials can be
locally tuned using synthetic chemistry.
1 Department of Chemistry and International Institute for Nanotechnology, Northwestern University, Evanston, Illinois 60208, USA. 2 Department of Physics
and Astronomy, University of Pittsburgh, 100 Allen Hall, 3941 O’Hara Street, Pittsburgh, Pennsylvania 15260, USA. 3 Pittsburgh Quantum Institute, Pittsburgh,
Pennsylvania 15260, USA. 4 Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA. * These
authors contributed equally to this work. w Present address: Department of Mechanical Engineering, Boston University, Boston, Massachusetts 02215, USA.
Correspondence and requests for materials should be addressed to J.L. (email: [email protected]).
NATURE COMMUNICATIONS | 7:10681 | DOI: 10.1038/ncomms10681 | www.nature.com/naturecommunications
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NATURE COMMUNICATIONS | DOI: 10.1038/ncomms10681
Results
Conductivity switching by solvent immersion/illumination.
Nominally conductive 4 uc LAO films were grown on (100)
single-crystal STO substrates using pulsed laser deposition21.
2
These samples were subsequently processed (Supplementary
Fig. 1) to define four electrodes for Van der Pauw
measurements of interfacial sheet resistance R (Fig. 1a). To
explore the effect of solvent exposure, R was measured before and
after immersing the sample in deionized water for 20 s and then
drying under an N2 stream. This immersion-drying-measurement
cycle was iterated to generate a plot of R versus cumulative
immersion time (Fig. 1b—left). Surprisingly, R increased by 44
orders of magnitude over the 3 total minutes of immersion.
Although this insulating state was stable in the dark under
ambient conditions (Supplementary Fig. 2), measurements of
R following sequential 15 s exposures to broadband light revealed
a decrease in R commensurate with the solvent-driven increase
(Fig. 1b—right). Importantly, owing to the observed light
sensitivity, samples were not exposed to light with wavelengths
below 520 nm unless otherwise noted.
XPS studies of LAO surface protonation. To evaluate the
chemical changes that correspond to conductivity switching, XPS
was employed (Supplementary Fig. 3)22. The O1s peak was found
to be descriptive of the chemical status of the LAO surface
(Fig. 2a), as it exhibited peaks from three discernable species: fully
coordinated lattice oxygen (M–O–M), protonated oxygen
(M–OH) and oxygen in adsorbed water (H2O). These
assignments are supported by the literature23 and a tilting
experiment (Supplementary Fig. 4). A 4-uc LAO sample was
subjected to a series of illumination and water treatments while
alternatively measuring R and chemical composition (Fig. 2b–e).
In all cases, exposure to light caused the M–O–M peak area to
decrease relative to M–OH, whereas water immersion displayed
the opposite effect. Interestingly, the area of the H2O peak
tracks the M–OH peak, suggesting that the protonated surface
binds more strongly to water (Fig. 2e). Although this
measurement only provided ratiometric information, the optical
absorbance measured by spectroscopic ellipsometry did not
appreciably change following illumination or solvent immersion
(Supplementary Fig. 5), suggesting that the number of optically
active oxygen vacancies is static during these treatments and that
a
n
AIO2
LaO
Au
TiO2
SrO
5 mm
b
104
103
R (MΩ–1)
T
he continued miniaturization of electronics and emergence
of novel two-dimensional materials and heterostructures
demands that the relationships between electronic
properties and surface chemistry be well understood. With
traditional (for example, III–V) semiconductor heterostructures,
the conducting interface is generally far (4100 nm) from the
functionally active surfaces, and consequently surface chemistry
plays a minor role. However, for the more recent class of complex
oxide heterostructures, that is, the interface between the band
insulators SrTiO3 (STO) and LaAlO3 (LAO), a high-mobility
quasi-two-dimensional electron liquid (2DEL)1 can form o2 nm
or 4 unit cells (uc) from the surface, bringing questions about
the role of surface states into sharp focus. Understanding the
surface chemistry of these complex-oxide interfaces is key to
understanding the array of fascinating properties these materials
exhibit, which includes gate-tunable superconductivity2,3,
magnetism4,5 and strong spin-orbit coupling6,7. More than a
decade after the first reports of conductivity at the LAO/STO
interface, the physical mechanism for 2DEL formation has not
been fully and convincingly explained1,2,8–14. Although 2DEL
formation is commonly attributed to an electronic reconstruction
resulting from band bending in the polar (100) LAO layer, the
‘polar catastrophe’ framework does not explain 2DEL formation
in (110) LAO/STO samples, which have no polar discontinuity15.
Furthermore, nominally insulating 3 uc (1.2 nm thick) LAO/STO
samples can be rendered locally and persistently conductive via
writing with charged scanning probes10,11. Switchable 2DELs in
3 uc samples implies the presence of a hidden degree of freedom,
and initial investigations implicated LAO surface chemistry
through the observation that humidity is required to write
conductive regions with a scanning probe16,17. However, the
relative importance of surface chemistry and LAO polarity is not
well understood and while immersion in solvents has been
observed to alter 2DEL mobility13, post-synthetic wet chemical
conditions that destroy 2DELs in samples with 4 uc or more
LAO have not been previously identified. Despite this gap in
experimental understanding, theoretical studies have stressed
the importance of surface chemistry by linking 2DEL formation
to chemical phenomena including the protonation of oxygen in
LAO, the generation of oxygen vacancies and adsorption of
water18–20.
Here we report a large (44 order of magnitude) reversible
switching of the LAO/STO interface conductivity in response to
solvent immersion and optical illumination. Through coordinated
electrical measurements, X-ray photoelectron spectroscopy (XPS)
and solvent immersions, we find that LAO/STO conductivity is
correlated with the protonation of the LAO surface. Furthermore,
by immersing the samples in various solutions including different
pH aqueous solutions, solvents with a range of pKa, and solutions
of molecules that function as proton sponges, we find that a
solvent’s ability to render the LAO/STO layer insulating is dictated
by its ability to deprotonate the LAO surface. Based on these
results, we propose a model in which LAO surface protonation
dictates the electronic state of the LAO/STO interface. In support
of this, we find that this effect diminishes as the LAO film
thickness is increased until it effectively disappears in LAO films
7 uc thick. Finally, we find that the conductive state can be directly
patterned by illuminating selected regions of the LAO/STO surface,
suggesting a future method for realizing reconfigurable electronics
based upon LAO/STO interfaces.
Water
102
101
100
10
Light
–1
0
1
2
t water (min)
3
0
1
2
t light (min)
3
Figure 1 | Observation of a reversible transition between a conductive
and insulating state by exposure to water and light. (a) Schematic
showing the bulk electrical transport measurement of 4 unit cell (uc)
LaAlO3 (LAO) on SrTiO3 (STO). (b) Sheet resistance R as determined by a
van der Pauw measurement versus total time exposed to deionized water
(twater, left) and total time exposed to broadband light (tlight, right).
Measurement uncertainty is smaller than the data markers in all cases.
NATURE COMMUNICATIONS | 7:10681 | DOI: 10.1038/ncomms10681 | www.nature.com/naturecommunications
ARTICLE
NATURE COMMUNICATIONS | DOI: 10.1038/ncomms10681
M–O–M
2.5
2.0
M–OH
1.5
H2O
1.0
0.5
535
533
529
531
Binding energy (eV)
104
R (MΩ
–1
)
b
the change measured by XPS is due to a change in the
protonation state of the LAO surface24. It is important to
emphasize that optical characterization techniques (for example,
XPS and ellipsometry) must be used with caution to study
LAO/STO. Specifically, XPS measurements were found to return
insulating samples to a conductive state, so it was important to
perform XPS after measuring electrical transport. In light of this
perturbative effect, XPS should be considered a qualitative
measure of surface protonation. Despite these limitations, we
consistently observed the trend of protonation increasing
with light exposure and decreasing with solvent immersion. We
recommend that future studies focus on the use of alternative
analytical surface tools such as scanning tunnelling microscopy to
provide a more detailed and quantitative picture of the chemical
state of the surface.
The combination of XPS and electrical transport
measurements suggests that interface conductivity increases with
surface protonation. Although this trend is in agreement with
first-principles theoretical studies16,18, immersion in water
deprotonating the LAO surface is in apparent contradiction to
studies of other perovskite oxides in which water immersion is
observed to increase protonation25. Thus, an extensive series of
experiments were designed to test what properties of solvents
drove the conductor to insulator transition.
3.0
102
100
10–2
M–O–M
c
0.75
0.74
0.73
0.72
M–OH
d
0.28
0.27
Immersion of LAO/STO in solvents. To test the hypothesis that
surface protonation dictates interface conductivity, we explored
the effect of solvent pH on the conductivity of 4 uc samples
(Fig. 3a). Following initialization in a conductive state, R was
measured before and after immersion in an aqueous solution of
sulfuric acid for 1 min and subsequent drying. Interestingly,
lowering the pH of the immersion solution from 7 to 3 decreased
the magnitude of conductive switching over 100-fold, suggesting
that immersion drives an acid–base reaction, where water acts as
a Lewis base and removes protons from the surface. This pH
range was selected because the isoelectric point of crystalline
aluminum oxide is pHB5 (ref. 26), thus one would expect the
surface charge of LAO to vary greatly between pH 3 and 7. To
ensure that the effect was not related to the sulfate counterion, the
sample was immersed in a sodium sulfate solution that was
isomolar with pHo2 sulfuric acid. Immersion in this salt solution
increased R more than immersion in pH 7 water, indicating that
pH is likely determining the observed conductivity change rather
than the anionic counterions.
If LAO/STO interface conductivity is dictated by surface
protonation, then immersion in solvents besides water that can
deprotonate the surface should have an analogous effect. Thus, a
0.26
0.25
e
H2O
0.11
0.09
0.07
3 min 3 min 6 min 12 min 3 min 12 min
Light Light Water Water Light Water
Experiment
Figure 2 | Mechanistic determination through X-ray photoelectron
spectroscopy (XPS). (a) XPS of 4 uc LAO/STO showing the O1s region.
The spectra are fit to the sum of three Gaussians assigned to free water
(H2O), protonated oxygen (M–OH), and oxygen in the bulk perovskite
lattice (M–O–M). (b) R measured following each treatment, with optical
excitation denoted by solid purple lines and water treatment denoted by
dashed blue lines. Here uncertainty is smaller than marker size. Evolution of
areas of M–O–M (c), M–OH (d) and H2O (e) peaks normalized by the sum
of M–O–M and M–OH measured while the sample was subjected to optical
excitation and water immersion.
a
b
104
103
DMF
EtOH× H2O
ACA
Form
MeCN
4
log(Rf/Ri)
)
–1
R (MΩ
c
5
102
101
100
3
2
MeNO2
1
–1
10
ACO
TOLTHF
0
10–2
pH 3
pH 5
10 mM
pH 7 Na SO
2
4
(ΔR/R)/E (cm2 mJ–1)
Counts (×104)
a
2
4
DCM
7 10 20 40 70 –12
Solvent permittivity
–6
pKa
0
0
–1
400
500
600
Wavelength (nm)
Figure 3 | Exploring the mechanism of conductivity switching in LAO/STO heterointerfaces. (a) R of 4 uc LAO/STO measured before (circles) and after
(squares) 1 min of immersion in solvents with varying concentrations of free protons. (b) (Left) Log base 10 of the ratio of the resistance Rf measured following
a 2-min immersion in toluene (TOL), tetrahydrofuran (THF), dichloromethane (DCM), acetophenone (ACO), acetaldehyde (ACA), ethanol (EtOH),
nitromethane (MeNO2), dimethylformamide (DMF), acetonitrile (MeCN), water (H2O) or formamide (Form) to the resistance in the conductive state Ri. Blue
and red markers represent solvents that do and do not function as Lewis bases, respectively. (right) Rf/Ri versus the pKa of the protonated solvents. (c) Ratio
of sheet resistance change DR to R normalized by the delivered optical energy E following illumination with light of a specified wavelength.
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NATURE COMMUNICATIONS | DOI: 10.1038/ncomms10681
series of experiments was performed in which a conductive 4 uc
sample was immersed in one of various solvents for 2 min
(Fig. 3b—left). Interestingly, only Lewis basic solvents were found
to drive conductivity switching; this observation is in support of
deprotonation as the mechanism of conductivity switching during
solvent immersion. More generally, solvents with relative
permittivity et20 had a small effect, whereas those with e420
substantially changed R. This result can be understood by
considering that lower permittivity solvents are less able to screen
the charge of the protons and overcome the electrostatic
attraction between the protons and the electrons in the 2DEL.
Importantly, although the resistance increase from immersion in
high permittivity solvents did not correlate with solvent
permittivity, it correlated extremely well with the pKa of the
protonated solvent (that is, BH þ -B þ H þ ; Fig. 3b—right),
strongly suggesting that the mechanism is dependent upon an
acid–base reaction in which the solvent accepts a proton from the
surface. In further support of this hypothesis, although nitromethane immersion only increased R 30-fold, the addition of
10 mM of a proton sponge to nitromethane resulted in a solution
that increased R 3,000-fold (Supplementary Fig. 6), indicating
that the ability to accept protons is critical for this process.
Furthermore, once the sample was prepared in the insulating
state, sequential solvent immersion did not appreciably decrease
R (Supplementary Fig. 7). Care was taken to dry solvents before
use, as even the addition of 1% water to tetrahydrofuran was
found to triple the effect of immersion (Supplementary Fig. 8).
Illumination of LAO/STO samples. Although it is plausible that
solvent immersion can deprotonate a surface, it is not straightforward that light would reverse this process. In an effort to
explore this photoconductivity effect, a 4-uc sample prepared in
an insulating state was exposed to monochromatic light of various wavelengths (Fig. 3c). Although R did not vary when illuminated by light at wavelengths Z500 nm, illumination at
wavelengthso450 nm decreased R. Interestingly, 450 nm photons
do not have enough energy to overcome the band gap of either
a
b
Conductive
STO LAO
CB
Insulating
+
EF H
Deprotonation
and electron loss
VB
Protonation resulting
in persistent
photoconductivity
LAO or STO, but oxygen vacancies in STO have optically active
transitions between 400 and 460 nm (refs 27,28), implicating
these defect states in the persistent photoconductivity. Following
illumination, R was found to change less than 10% over 24 h
when the sample was kept in vacuum or dry air (Supplementary
Fig. 2), but the presence of ambient humidity accelerated the
upward drift in R, suggesting that water is playing a role in the
light-driven process (Supplementary Fig. 2).
Based upon these observations, we postulate a surface
protonation-based mechanism for the role of solvent immersion
and exposure to light in LAO/STO interfaces (Fig. 4). Specifically,
the cycle consists of a chemical change of the protonation state of
LAO and an electronic change, in which an electron is exchanged
with the environment. Initially, the sample is in the conductive
state and the LAO surface is protonated (Fig. 4a). Solvent
immersion deprotonates the surface through an acid–base
reaction, removing the source of electrostatic attraction that
holds electrons at the interface. Thus, an electron leaves the
system either through the electrodes or through exchange with
the solvent at the leads. With the interface state vacant, the system
is insulating (Fig. 4b). Based upon the spectral dependence of the
persistent photoconductivity and well-documented presence of
oxygen vacancies near the LAO/STO interface8, we postulate that
exposing the insulating surface to light excites oxygen vacancies at
or near the LAO/STO interface. These photogenerated electronhole pairs are split because the polar potential in the LAO drives
the hole towards the LAO surface (Fig. 4c). Once on the surface,
the hole is able to accept an electron from an adsorbed
water molecule through the oxidative water splitting reaction,
1/2H2O-H þ þ 1/4O2 þ e (Fig. 4d), in analogy to the
photocatalytic splitting of adsorbed water observed for many
perovskite oxides29,30. Importantly, this process completes both
the chemical and electronic cycle by annihilating the hole, thus
preventing subsequent electron-hole recombination and creating
a proton which is free to associate with Lewis basic sites on the
LAO surface (Fig. 4a).
LAO film thickness. If surface chemistry, rather than band
bending, is playing a dominant role in 2DEL formation, then the
observed resistivity switching should persist beyond the reported
4 uc critical thickness. To explore this hypothesis, we performed a
series of experiments testing the effects of water immersion and
illumination on samples with 4, 5, 6, 7 and 8 uc of LAO. Samples
were subjected to sequential 30 s immersions in deionized water
for a total of 3 min followed by 15 s exposures to light for a total
of 3 min (Fig. 5). Interestingly, the 5 uc sample exhibited a three
IIIumination
104
c
H+ + 1 O2
4
e–
1H O
2 2
10
hν
Water
oxidation
e–
h+
4 uc
5 uc
6 uc
7 uc
8 uc
3
102
101
100
Figure 4 | Model of giant conductivity switching in LAO/STO
heterointerfaces. (a) Initially, the conducting band (CB) and valence band
(VB) of the LAO/STO interface bend to create an occupied conductive state
at the interface. In addition, a mid-gap oxygen vacancy state in the STO is
present below the Fermi energy EF. (b) Solvent immersion removes the
proton and causes the electron to leave the interface. (c) Ultraviolet light
creates electron-hole pairs at the oxygen vacancy, which are separated by
the polar LAO potential. Specifically, the hole ‘bubbles up’ the VB potential
in the LAO and segregates to the surface. (d) The surface hole oxidizes
adsorbed water, thereby generating a proton. This proton can then interact
with Lewis basic sites of the LAO.
4
R /R0
d
0
1
2
t water (min)
3
0
1
2
3
t light (min)
Figure 5 | LAO thickness effect on conductivity switching. R versus twater
(left) and tlight (right) measured for LAO/STO samples with different
numbers of unit cells of LAO. Measurement uncertainty is smaller than the
data markers in all cases. Note that times twater and tlight indicate cumulative
exposure to water and light, respectively. Sheet resistance R normalized by
the value before the first water immersion R0 ¼ R(twater ¼ 0). The data
corresponding to the 7 uc and 8 uc samples are difficult to distinguish
because neither deviates more than 10% away from unity.
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order of magnitude shift in R and the 6 uc sample exhibited a two
order of magnitude shift in R, whereas R for both the 7 and 8 uc
sample varied under 10% during the entire process. These results
support early theoretical work in which the critical thickness was
computed to be B6 uc and it was hypothesized that the
experimentally observed critical thickness of 4 uc was due
to defects or surface adsorbates12. Although experimental
limitations prevented us from observing changes in transport
properties faster than the scale of seconds, the fast dynamics of
this transition represent a fascinating opportunity for further
study.
Discussion
In apparent contrast to our observations, a prior study has shown
that solvent immersion renders LAO/STO heterointerfaces
somewhat more conductive (that is, doubling the conductivity)13.
This discrepancy could be due to two factors: first, in the prior
work, it was not stated whether or not the experiments were
performed in the dark; however, some experimental variations
were attributed to ‘fluctuations in the local illumination.’ Second,
the study focused on 10 uc LAO/STO, which we expect to have a
small variation with solvent immersion (extrapolating from
Fig. 5). The only experiment reported on samples with less
than 10 uc of LAO utilized acetone, which we expect to have a
modest effect both due to the low permittivity of the solvent
(B20e0) and the short duration of immersion (10 s). When we
replicated these conditions (immersing a conductive 4 uc sample
in acetone for 10 s) but kept the sample in the dark, we observed a
mere 84% increase in R. Thus, we attribute illumination details
and choice of immersion conditions to be the cause of the
apparent inconsistency with previous work. Our results are
consistent with recent coordinated XPS and electrical studies that
identify hydrogen species adsorbed from air (i.e. water vapor and
hydrogen) as factors that increase the interface conductivity31.
It is also worth addressing how this phenomenon could not
have been observed previously despite many groups using solvent
immersion as part of their fabrication processes. Ultimately, it is
easy to expose a sample to enough adventitious light that the
conductive state is restored despite a prior solvent immersion. In
particular, samples stored in a transparent container overnight in
normal workplace illumination conditions would commonly
appear fully conductive. Further, temperature-dependent transport measurements of a 4-uc sample with persistent photoconductivity revealed a smoothly varying mobility and carrier
density commensurate with previous measurements of LAO/STO
samples (Supplementary Fig. 9)1. These observations are
consistent with the picture that solvent immersion renders the
LAO/STO heterointerface insulating and exposure to light
recovers the conductivity.
The ability to reversibly switch the conductivity of LAO/STO
interfaces through solvent immersion and exposure to light
suggests several approaches for realizing large-scale reconfigurable nanoscale patterning of conductive areas. Indeed, preliminary experiments demonstrate that photopatterning can achieve a
42 order of magnitude ratio between the resistance of the
patterned and unpatterned regions using standard photolithography (Supplementary Fig. 10). The essential role that surface
chemistry plays in mediating 2DEL formation implies that the full
diversity of synthetic chemistry may be utilized to design selfassembled monolayers that precisely tune the 2DEL. Taken
together, this work provides compelling experimental evidence
for surface protonation playing a major role in the conductivity of
LAO/STO interfaces and illustrates how this phenomenon can be
modulated using solvent immersion and illumination. Although
XPS is used here as a qualitative measurement owing to its
interaction with the surface, the abundance of protonated oxygen
only changed by B5%. This naturally raises the question: what
change in surface protonation is required to drive the metal to
insulator transition? Given that LAO/STO is a system
characterized by small changes in parameters (for example,
gate voltage, LAO film thickness) producing dramatic effects
on electronic transport9, it will be fascinating to complement
these experiments with quantitative measurements of surface
protonation.
Methods
Sample preparation. LAO/STO samples were grown via pulsed laser deposition
onto (001) STO substrates. Low miscut (o0.10°) single-crystal STO (001) substrates
were etched by buffered hydrofluoric acid for 60 s to obtain substrates with a B-site
(TiO2)-terminated surface. Then, the substrates were annealed in a tube furnace at
1,000 °C for 6 h to make an atomically smooth surface with single-unit-cell height
steps. For the growth of epitaxial LAO thin films, a KrF excimer laser (248 nm) beam
was focused on a stoichiometric LaAlO3 single-crystal target and pulsed at 3 Hz
frequency. The growth temperature of substrates was 550 °C and the background
oxygen pressure was 10 3 mbar. After growing 4 uc of LAO with in situ reflection
high-energy electron diffraction (RHEED) oscillation monitoring, the samples were
slowly cooled down to room temperature. Photolithography, reactive ion etching and
electron beam evaporation were subsequently used to introduce four electrodes that
contact the heterointerface.
Measurement of conductivity switching. Solvents (excluding water) were stored
for 2 days with molecular sieves to remove trace water and used without further
purification. Electrical characterization was performed using a four terminal
Van der Pauw measurement with a ±200 mV bias voltage. Illumination was
performed using a broadband mercury arc lamp, which produced an optical
intensity of 1–2 mW cm 2 in the range 400–500 nm. To establish a consistent
baseline state, samples were illuminated for 3 min. Solvent treatments consisted of
immersing the sample in a scintillation vial with B10 ml of the solvent of interest.
Following a predetermined amount of time, the sample was removed and dried
under a N2 stream. XPS measurements were taken following transport measurements and consisted of five high-resolution scans taken at each of three regions of
the sample.
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Acknowledgements
This material is based upon work supported by the National Science Foundation
under the University of Pittsburgh’s award DMR-1124131 and the Department
of Defense National Security Science and Engineering Faculty Fellowship award
N00014-15-1-0043.
Author contributions
K.A.B., S.H., D.J.E., M.H., P.I., J.M.-A., J.L. and C.A.M. designed the experiments
and analysed the data. K.A.B., S.H., D.J.E. and M.H. performed the experiments.
H.L., S.R. and C.-B.E. prepared materials. All authors contributed to writing the
manuscript.
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How to cite this article: Brown, K. A. et al. Giant conductivity switching of
LaAlO3/SrTiO3 heterointerfaces governed by surface protonation. Nat. Commun.
7:10681 doi: 10.1038/ncomms10681 (2016).
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