www.agelectronica.com www.agelectronica.com 2MBI150NC-120 IGBT Module 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Symbol VCES VGES Collector current Continuous 1ms Continuous 1ms Max. power dissipation IC IC pulse -IC -IC pulse PC Operating temperature Storage temperature Isolation voltage Screw torque Tj Tstg Vis Mounting *1 1100 +150 -40 to +125 AC 2500 (1min.) 3.5 Terminals *1 3.5 Unit V V A A Rating 1200 ±20 150 300 150 300 Equivalent Circuit Schematic C2E1 E2 C1 A A W °C ¤ ¤ G1 °C V N·m N·m E1 G2 ¤ Current control circuit E2 *1 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. Max. – – 2.0 – – 30 4.5 – 7.5 – – 3.3 – 24000 – – 8700 – – 7740 – – 0.65 1.2 – 0.25 0.6 – 0.85 1.5 – 0.35 0.5 – – 3.0 – – 0.35 Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA VGE=15V, IC=150A VGE=0V VCE=10V f=1MHz VCC=600V IC=150A VGE=±15V RG=5.6 ohm IF=150A, VGE=0V IF=150A mA µA V V pF Conditions Unit IGBT Diode the base to cooling fin °C/W °C/W °C/W µs V µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.025 Max. 0.11 0.33 – *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound www.agelectronica.com www.agelectronica.com www.agelectronica.com www.agelectronica.com IGBT Module 2MBI150NC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C 300 Collector current : Ic [A] Collector current : Ic [A] 300 200 100 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 100 0 0 Collector-Emitter voltage : 200 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 Gate-Emitter voltage : VGE [V] 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=5.6 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=5.6 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 10 0 100 200 Collector current : Ic [A] www.agelectronica.com 300 0 100 200 300 Collector current : Ic [A] www.agelectronica.com www.agelectronica.com www.agelectronica.com IGBT Module 2MBI150NC-120 Dynamic input characteristics Switching time vs. RG Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 25 800 20 600 15 400 10 200 5 100 10 30 0 0 50 500 0 2000 1500 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current : Irr [A] 300 200 100 Reverse recovery time : trr [n sec.] Forward current vs. Forward voltage VGE=0V Collector current : -Ic [A] (Forward current : IF [A] ) 1000 Gate-Emitter voltage : VGE [V] Tj=25°C Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C 100 50 10 0 0 1 2 3 4 0 5 100 200 300 Forward current : IF [A] Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125°C, RG > = 5.6 ohm Switching loss vs. Collector current Vcc=600V, RG=5.6 ohm, VGE=±15V 50 1200 40 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] 1400 30 20 1000 800 600 400 10 200 0 0 0 50 100 150 Collector current : Ic [A] www.agelectronica.com 200 250 300 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 www.agelectronica.com www.agelectronica.com www.agelectronica.com IGBT Module 2MBI150NC-120 Capacitance vs. Collector-Emitter voltage Transient thermal resistance Tj=25°C Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [°C/W] 100 0.1 0.01 10 1 0.001 0.001 0.01 0.1 Pulse width : PW [sec.] 1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Outline Drawings, mm mass : 240g www.agelectronica.com www.agelectronica.com
