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2MBI150NC-120
IGBT Module
1200V / 150A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Symbol
VCES
VGES
Collector
current
Continuous
1ms
Continuous
1ms
Max. power dissipation
IC
IC pulse
-IC
-IC pulse
PC
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Tj
Tstg
Vis
Mounting *1
1100
+150
-40 to +125
AC 2500 (1min.)
3.5
Terminals *1
3.5
Unit
V
V
A
A
Rating
1200
±20
150
300
150
300
Equivalent Circuit Schematic
C2E1
E2
C1
A
A
W
°C
¤
¤
G1
°C
V
N·m
N·m
E1
G2
¤ Current control circuit
E2
*1 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Symbol
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
Max.
–
–
2.0
–
–
30
4.5
–
7.5
–
–
3.3
–
24000
–
–
8700
–
–
7740
–
–
0.65 1.2
–
0.25 0.6
–
0.85 1.5
–
0.35 0.5
–
–
3.0
–
–
0.35
Conditions
Unit
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=150A
VGE=±15V
RG=5.6 ohm
IF=150A, VGE=0V
IF=150A
mA
µA
V
V
pF
Conditions
Unit
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
µs
V
µs
Thermal resistance characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Characteristics
Min.
Typ.
–
–
–
–
–
0.025
Max.
0.11
0.33
–
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
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IGBT Module
2MBI150NC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
300
Collector current : Ic [A]
Collector current : Ic [A]
300
200
100
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
VCE [V]
10
8
Collector-Emitter voltage :
VCE [V]
100
0
0
Collector-Emitter voltage :
200
6
4
2
0
8
6
4
2
0
0
5
10
15
20
25
0
Gate-Emitter voltage : VGE [V]
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=5.6 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, RG=5.6 ohm, VGE=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10
10
0
100
200
Collector current : Ic [A]
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300
0
100
200
300
Collector current : Ic [A]
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IGBT Module
2MBI150NC-120
Dynamic input characteristics
Switching time vs. RG
Collector-Emitter voltage : VCE [V]
Switching time : ton, tr, toff, tf [n sec.]
1000
1000
25
800
20
600
15
400
10
200
5
100
10
30
0
0
50
500
0
2000
1500
Gate charge : Qg [nC]
Gate resistance : RG [ohm]
Reverse recovery characteristics
trr, Irr, vs. IF
Reverse recovery current : Irr [A]
300
200
100
Reverse recovery time : trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Collector current : -Ic [A]
(Forward current : IF [A] )
1000
Gate-Emitter voltage : VGE [V]
Tj=25°C
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
100
50
10
0
0
1
2
3
4
0
5
100
200
300
Forward current : IF [A]
Emitter-Collector voltage VECD [V]
(Forward voltage : VF [V])
Reversed biased safe operating area
< 15V, Tj <
+VGE=15V, -VGE =
= 125°C, RG >
= 5.6 ohm
Switching loss vs. Collector current
Vcc=600V, RG=5.6 ohm, VGE=±15V
50
1200
40
Collector current : Ic [A]
Switching loss : Eon, Eoff, Err [mJ/cycle]
1400
30
20
1000
800
600
400
10
200
0
0
0
50
100
150
Collector current : Ic [A]
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200
250
300
0
200
400
600
800
1000
Collector-Emitter voltage : VCE [V]
1200
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IGBT Module
2MBI150NC-120
Capacitance vs. Collector-Emitter voltage
Transient thermal resistance
Tj=25°C
Capacitance : Cies, Coes, Cres [nF]
Thermal resistance : R th (j-c) [°C/W]
100
0.1
0.01
10
1
0.001
0.001
0.01
0.1
Pulse width : PW [sec.]
1
0
5
10
15
20
25
30
35
Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
mass : 240g
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