Littelfuse Power Semiconductor IGBT Module MG17200-466940

Power Module
1700V 200A IGBT Module
MG17200D-BN4MM
RoHS ®
Features
• IGBT3 CHIP(1700V
Trench+Field Stop
technology)
• D
IODE CHIP(1700V
EMCON 3 technology)
• L
ow turn-off losses, short
tail current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• V
CE(sat) with positive
temperature coefficient
Applications
• H
igh frequency switching
application
Agency Approvals
AGENCY
• Motion/servo control
• UPS systems
• Medical applications
AGENCY FILE NUMBER
E71639
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
TJ op
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
-40
-40
AC, t=1min
Max
Unit
150
°C
125
°C
125
°C
4000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
Weight
320
g
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
VCES
Collector - Emitter Voltage
TJ=25°C
1700
V
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
TC=25°C
300
A
TC=80°C
200
A
tP=1ms
400
A
1250
W
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
It
2
TJ=25°C
1700
V
TC=25°C
300
A
TC=80°C
200
A
tP=1ms
400
A
TJ =125°C, t=10ms, VR=0V
6500
A 2S
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG17200D-BN4MM
1
277
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=8.0mA
5.2
Collector - Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25°C
5.8
6.4
V
2.0
2.45
IC=200A, VGE=15V, TJ=125°C
2.4
V
IGBT
VGE(th)
VCE(sat)
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Intergrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1700V, VGE=0V, TJ=25°C
3
mA
VCE=1700V, VGE=0V, TJ=125°C
20
mA
400
nA
VCE=0V,VGE=±20V, TJ=125°C
VCE=900V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=900V
IC=200A
RG =6.8Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
V
VGE=±15V
Inductive Load
-400
3.8
Ω
2.3
μC
18
nF
0.6
nF
TJ =25°C
280
ns
TJ =125°C
380
ns
TJ =25°C
80
ns
TJ =125°C
100
ns
TJ =25°C
800
ns
TJ =125°C
1000
ns
TJ =25°C
120
ns
TJ =125°C
200
ns
TJ =25°C
58
mJ
TJ =125°C
78
mJ
TJ =25°C
43
mJ
TJ =125°C
63
mJ
800
A
tpsc≤10μS , VGE=15V; TJ=125°C,VCC=1000V
Junction-to-Case Thermal Resistance (Per IGBT)
0.1
K/W
Diode
VF
Forward Voltage
IF=200A , VGE=0V, TJ =25°C
1.8
IF=200A , VGE=0V, TJ =125°C
1.9
2.2
V
V
A
IRRM
Max. Reverse Recovery Current
IF=200A , VR=900V
230
Qrr
Reverse Recovery Charge
diF/dt=-2700A/μs
85
μC
Erec
Reverse Recovery Energy
TJ=125°C
48
mJ
RthJCD
MG17200D-BN4MM
Junction-to-Case Thermal Resistance (Per Diode)
2
278
0.16
K/W
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
400
400
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
300
Tj =25°C
240
IC (A)
IC (A)
320
160
Tj =125°C
200
Tj =125°C
100
80
0
0
1.0
3.0
2.0
VCE˄V˅
0
4.0
Figure 3: Typical Transfer characteristics
0
1.0
5.0
4.0
Figure 4: Switching Energy vs. Gate Resistor
400
400
VCE=900V
IC=200A
VGE=±15V
Tj =125°C
VCE =20V
300
300
Eon
Eon Eoff (mJ)
Tj =25°C
IC (A)
3.0
2.0
VCE˄V˅
200
200
Tj =125°C
100
100
Eoff
0
5
6
7
8
9
10
VGE˄V˅
11
0
12 13
Figure 5: Switching Energy vs. Collector Current
200
10
20
30
40
RG˄Ω˅
50
60
70
Figure 6: Reverse Biased Safe Operating Area
VCE=900V
RG=6.8Ω
VGE=±15V
TVj =125°C
400
320
120
80
Eon
IC (A)
Eon Eoff (mJ)
160
0
Eoff
40
0
0
MG17200D-BN4MM
240
160
80
0
50 100 150 200 250 300 350 400
IC˄A˅
279
3
RG=6.8 Ω
VGE=±15V
Tj =125°C
0 200
600
1000
VCE˄V˅
1400
1800
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Figure 7: Diode Forward Characteristics
Figure 8: S
witching Energy vs. Gate Resistor
400
60
IF=200A
VCE=900V
Tj =125°C
50
Erec (mJ)
IF (A)
300
200
40
30
20
Tj =125°C
100
10
Tj =25°C
0
0
1.0
2.0
VF˄V˅
0
3.0
4.0
100
20
50
30
40
RG˄Ω˅
60
70
1
RG=6.8Ω
VCE=900V
Tj =125°C
Diode
ZthJC (K/W)
Erec (mJ)
10
Figure 10: Transient Thermal Impedance of
Diode and IGBT
Figure 9: Switching Energy vs. Forward Current
80
0
60
40
0.1
IGBT
0.01
20
0
0
MG17200D-BN4MM
100
200
IF (A)
300
0.001
0.001
400
4
280
0.01
0.1
1
10
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Dimensions-Package D
Circuit Diagram
2.8x0.5
3-M6
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG17200D-BN4MM
MG17200D-BN4MM
320g
Bulk Pack
30
Part Marking System
Part Numbering System
MG17200 D - B N4 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
1
3
2
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
17: 1700V
CIRCUIT TYPE
CURRENT RATING
PACKAGE TYPE
4
MG17200D-BN4MM
5
LOT NUMBER
6
7
Space
reserved
for QR
code
200: 200A
MG17200D-BN4MM
5
281
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Littelfuse:
MG17200D-BN4MM