1 Power MOSFETs for Switching Power Supply February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0550011_01 2 Power MOS FET for Switching Power Supply TO-3P(N) High speed switching & High speed trr TO-220SIS series Main Switch / PFC High Voltage & Low ON resistance MOS FET Transistors TO-220AB High speed switching & Low ON resistance Output High Speed Trench N ch MOSFET(High speed –MOSIII ) DP0550011_01 3 Power MOS FET for Switching Power Supply DC- DC converter ( Synchronous Buck Converter ) ¾Decrease ON resistance Loss & Switching Loss ¾Decrease Gate resistance ¾Decrease Cgd/ Cgs capacitance ratio ¾High Power & Small package VDSS=20 to 40V Ultra High Speed U-MOS III DC-DC converter (Main switch) ¾Decrease ON resistance Loss & Switching Loss ¾Decrease Gate resistance ¾High Power & Small package Power Management ¾Decrease ON resistance Loss ¾High Power & Small package Power supply (PFC, Main switch, Synchronous rectifying) ¾Decrease ON resistance Loss VDSS=100 to 250V High speed π-MOS VII MACH II VDSS=20 to 30V Super Low ON resistance U-MOS IV VDSS=500 to 650V Low ON resistance MOSFET VDSS=60 to 150V Ultra high speed U-MOS III Transistors DP0550011_01 4 New Package TO-220SIS(Smart ISolation) TO-220SIS p-MOS IV/VI series <Feature> 1) Height smaller than current package : 2.8mm Height on PCB is smaller due to shorter stand - off Meet low profile assembly requirement 2) Faster switching Switching time toff is 10% shorter by lower Qg ( Optimize chip design ) 3) Lead free line up Meet environmental requirement ( Terminal : lead free ) Transistors DP0550011_01 5 TO-220SIS Package Lineup Part Number 2SK3757 2SK3766 2SK3869 2SK3935 2SK3563 2SK3868(*) 2SK3561 2SK3568 2SK3934 2SK3767 2SK3567 2SK3562 2SK3667 2SK3569 2SK3797 2SK3566 2SK3564 2SK3798 2SK3565 2SK3742 2SK3799 Transistors Max.Rating VDSS(V) ID(A) 450 2 2 10 17 5 500 600 900 8 12 15 2 3.5 6 7.5 10 13 2.5 3 4 5 5 8 RDS(ON) (Max)(Ω) 2.45 2.45 0.68 0.25 1.5 1.7 0.85 0.52 0.3 5 2.2 1.25 1.0 0.75 0.43 6.4 4.3 3.5 2.5 2.5 1.3 Sample MP Current TO220NIS Part Number OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK OK 2SK3543 Vth up 2SK3407 2SK2662 2SK3316 2SK2543 2SK2842 2SK3067 2SK2750 2SK2545 2SK2996 2SK2843 2SK2718 2SK2700 2SK2717 Vth up - DP0550011_01 6 TO-220 (W) High speed U-MOS III chip & Cu cramp package Current : TO-220(AB) New : TO-220(W) High speed chip design 0.6 1.32 Decrease package resistance 1mΩ by copper cramp RDS(ON) (typ.) QSW(typ.) ID (A) VGS=10V 60 (70) S3J92 75 S3J93 100 Max.Rating Part Number VDSS (V) S3H92 VDS=48V RDS(ON)*Qsw (mΩ nc) Sample 4.8m Ω 27nC 130 Note1 (60) 6.3m Ω 26nC 165 Note1 (55) 9.8m Ω 25nC 245 Note1 Package TO-220 Non Isolation Note 1: Please contact Toshiba. Transistors DP0550011_01 7 TO-220SIS (TO-220 Smart Isolation) Copper Cramp <1> Larger Fusing Capability Æ Double to current package <2> Low package resistance (Chip to lead ) Æ[50% decrease] <3> High heat radiation by copper connector Gate cramp Transistors Source cramp DP0550011_01 8 Power MOS FET for High Voltage Switching Power Supply π-MOS VI MACH II series - TO-3P(N) Low ON resistance * Decrease Crss drastically by Mach-II design Capacitane - VDS 10000 <Low ON resistance Type> Part Num ber 2SK3907 M ax.rating RDS(ON) (Ω) VDSS(V) ID(A) typ. max. 500 23 0.18 0.23 MP Package OK TO-3P(N) 2SK3911 600 20 0.22 0.32 Capacitance (pF) 1000 VDSS=600V 100 Ciss 10 Coss OK 1 1 Crss 70 % decrease by Mach-II design 10 Crss 100 VDS (V) Crss 70% decrease ! QG 40% smaller ! Transistors DP0550011_01 9 Power MOS FET for High Voltage Switching Power Supply π-MOS VI MACH II series - TO-3P(N) Low ON resistance Mach II design : lower gate cpacitance 600V MACH- 2SK3911 Current process Smaller gate charge QGS=92nC VDS:100V/div QGS=56nC ID:5A/div VDS:100V/div VGS:2V/div VGS:2V/div 10nC/div Crss : 70 % decrease ! QG 40% smaller ! Transistors ID:5A/div VGS=0 VDS=0 ID=0 10nC/div ID=20A, IG=2mA, Tc=25 degree C DP0550011_01 10 Power MOS FET for High Voltage Switching Power Supply MOS FET with high speed diode 1. Comparison data HSD!! Part Number VDSS (V) ID (A) Current Ch3[ V] Ch2[ V] 300. 0 0. 6 200. 0 0. 4 100. 0 0. 2 0. 0 0. 0 - 100. 0 - 0. 2 2SK3868 500 2SK3563 500 5 1.5 - 200. 0 - 0. 4 RDS(ON) (Ohm) 5 1.7 - 300. 0 - 0. 6 trr (ns) 150 1400 - 400. 0 - 0. 8 Qrr (uC) 0.3 9 - 500. 0 - 1. 0 0. 0 IDR:2A/div VDS:100V/div t:50ns/div 0V,0A 50. 0 100. 0 150. 0 200. 0 250. 0 300. 0 350. 0 400. 0 Ti me[ ns] " 10- MAY- 04" " 17: 08: 18. 85" ( 1/ 2) 2. Line up Part Number 2SK3868 2SK3313 2SK3314 2SK3131 Transistors Max. Rating VDSS(V) ID(A) 500 5 500 12 500 15 500 50 RDS(ON)(Ohm) *max 1.7 0.62 0.48 0.11 trr(ns) *typ 150 100 120 140 Package TO-220 SIS TO-220 NIS TO-3P(N) TO-3P(L) DP0550011_01 11 The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer’s own risk. 021023_B The products described in this document may include products subject to the foreign exchange and foreign trade laws. 021023_F The products described in this document may contain components made in the United States and subject to export control of the U.S. authorities. Diversion contrary to the U.S. law is prohibited. 021023_H TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q Transistors DP0550011_01