Datasheet - Mouser Electronics

TIP42 / TIP42C
PNP Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP41 Series
TO-220
1
1.Base
2.Collector
3.Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
TIP42
TIP42
TO-220 3L (Single Gauge)
Bulk
TIP42C
TIP42C
TO-220 3L (Single Gauge)
Bulk
TIP42CTU
TIP42C
TO-220 3L (Single Gauge)
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
TIP42
-40
TIP42C
-100
TIP42
-40
TIP42C
-100
Unit
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-6
A
ICP
Collector Current (Pulse)
-10
A
IB
Base Current
-2
A
TJ
Junction Temperature
150
°C
-65 to 150
°C
TSTG
Storage Temperature Range
© 2000 Fairchild Semiconductor Corporation
TIP42 / TIP42C Rev. 1.1.0
V
V
www.fairchildsemi.com
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
November 2014
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Value
Collector Dissipation (TC = 25°C)
65
Collector Dissipation (TA = 25°C)
2
Unit
W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining TIP42
Voltage(1)
TIP42C
ICEO
Collector Cut-Off Current
ICES
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
hFE
DC Current Gain(1)
VCE(sat)
VBE(on)
fT
Conditions
Collector-Emitter Saturation
Base-Emitter On
IC = -30 mA, IB = 0
Min.
Max.
-40
V
-100
TIP42
VCE = -30 V, IB = 0
-0.7
TIP42C
VCE = -60 V, IB = 0
-0.7
TIP42
VCE = -40 V, VEB = 0
-400
TIP42C
VCE = -100 V, VEB = 0
-400
VEB = -5 V, IC = 0
Voltage(1)
Voltage(1)
Current Gain Bandwidth Product
-1
VCE = -4 V, IC = -0.3 A
30
VCE = -4 V, IC = -3 A
15
Unit
mA
μA
mA
75
IC = -6 A, IB = -600 mA
-1.5
V
VCE = -4 V, IC = -6 A
-2.0
V
VCE = -10 V, IC = -500 mA,
f = 1 MHz
3.0
MHz
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
© 2000 Fairchild Semiconductor Corporation
TIP42 / TIP42C Rev. 1.1.0
www.fairchildsemi.com
2
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
Thermal Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = -4V
100
10
1
-0.01
-0.1
-1
-10
-2.0
IC/IB = 10
-1.6
VBE(sat)
-1.2
-0.8
VCE(sat)
-0.4
-0.0
-0.01
-0.1
IC[A], COLLECTOR CURRENT
-10
-100
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
100
PC[W], POWER DISSIPATION
-100
IC(MAX) (PULSE)
-10
ms
0.5
s
5m
IC(MAX) (DC)
s
1m
IC[A], COLLECTOR CURRENT
-1
-1
TIP42
TIP42A
TIP42B
TIP42C
-10
60
40
20
0
-0.1
-1
80
0
-100
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
© 2000 Fairchild Semiconductor Corporation
TIP42 / TIP42C Rev. 1.1.0
Figure 4. Power Derating
www.fairchildsemi.com
3
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2000 Fairchild Semiconductor Corporation
TIP42 / TIP42C Rev. 1.1.0
www.fairchildsemi.com
4
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
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Full Production
Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I72
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